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Thermal Management Of Gallium Nitride Electronics

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Thermal Management of Gallium Nitride Electronics

Thermal Management of Gallium Nitride Electronics Book
Author : Marko Tadjer,Travis Anderson
Publisher : Woodhead Publishing
Release : 2022-07-15
ISBN : 0128211059
Language : En, Es, Fr & De

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Book Description :

Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies Touches on emerging, real-world applications for thermal management strategies in power electronics

Gallium Nitride Electronics

Gallium Nitride Electronics Book
Author : Rüdiger Quay
Publisher : Springer Science & Business Media
Release : 2008-04-05
ISBN : 3540718923
Language : En, Es, Fr & De

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Book Description :

This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

Gallium Nitride GaN

Gallium Nitride  GaN  Book
Author : Farid Medjdoub
Publisher : CRC Press
Release : 2017-12-19
ISBN : 1482220040
Language : En, Es, Fr & De

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Book Description :

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Gallium Nitride Power Devices

Gallium Nitride Power Devices Book
Author : Hongyu Yu,Tianli Duan
Publisher : CRC Press
Release : 2017-07-06
ISBN : 1351767607
Language : En, Es, Fr & De

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Book Description :

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

III Nitride Electronic Devices

III Nitride Electronic Devices Book
Author : Rongming Chu,Keisuke Shinohara
Publisher : Academic Press
Release : 2019-10
ISBN : 0128175443
Language : En, Es, Fr & De

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Book Description :

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field

Gallium Nitride and Silicon Carbide Power Technologies 4

Gallium Nitride and Silicon Carbide Power Technologies 4 Book
Author : K. Shenai,M. Dudley,M. Bakowski,N. Ohtani
Publisher : The Electrochemical Society
Release : 2022-11-29
ISBN : 1607685442
Language : En, Es, Fr & De

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Book Description :

Download Gallium Nitride and Silicon Carbide Power Technologies 4 book written by K. Shenai,M. Dudley,M. Bakowski,N. Ohtani, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Issues in General Science and Scientific Theory and Method 2013 Edition

Issues in General Science and Scientific Theory and Method  2013 Edition Book
Author : Anonim
Publisher : ScholarlyEditions
Release : 2013-05-01
ISBN : 1490109536
Language : En, Es, Fr & De

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Book Description :

Issues in General Science and Scientific Theory and Method: 2013 Edition is a ScholarlyEditions™ book that delivers timely, authoritative, and comprehensive information about Mixed Methods Research. The editors have built Issues in General Science and Scientific Theory and Method: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Mixed Methods Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in General Science and Scientific Theory and Method: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique

Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique Book
Author : David J. Miller
Publisher : Stanford University
Release : 2011
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Gallium nitride is an important material for the production of next-generation visible and near-UV optical devices, as well as for high temperature electronic amplifiers and circuits; however there has been no bulk method for the production of GaN substrates for device layer growth. Instead, thick GaN layers are heteroepitaxially deposited onto non-native substrates (usually sapphire) by one of two vapor phase epitaxy (VPE) techniques: MOVPE (metalorganic VPE) or HVPE (hydride VPE). Each method has its strengths and weaknesses: MOVPE has precise growth rate and layer thickness control but it is slow and expensive; HVPE is a low-cost method for high rate deposition of thick GaN, but it lacks the precise control and heterojunction layer growth required for device structures. Because of the large (14%) lattice mismatch, GaN grown on sapphire requires the prior deposition of a low temperature MOVPE nucleation layer using a second growth process in a separate deposition system. Here we present a novel hybrid VPE system incorporating elements of both techniques, allowing MOVPE and HVPE in a single growth run. In this way, a thick GaN layer can be produced directly on sapphire. GaN growth commences as small (50-100 nm diameter) coherent strained 3-dimensional islands which coalesce into a continuous film, after which 2-dimensional layer growth commences. The coalescence of islands imparts significant stress into the growing film, which increases with the film thickness until catastrophic breakage occurs, in-situ. Additionally, the mismatch in thermal expansion rates induces compressive stress upon cooling from the growth temperature of 1025°C. We demonstrate a growth technique that mitigates these stresses, by using a 2-step growth sequence: an initial high growth rate step resulting in a pitted but relaxed film, followed by a low growth rate smoothing layer. As a result, thick (> 50 [Mu]m) and freestanding films have been grown successfully. X-ray rocking curve linewidth of 105 arcseconds and 10K PL indicating no "yellow" emission indicate that the material quality is higher than that produced by conventional MOVPE. By further modifying the hybrid system to include a metallic Mn source, it is possible to grow a doped semi-insulating GaN template for use in high frequency electronics devices.

Gallium Nitride Processing for Electronics Sensors and Spintronics

Gallium Nitride Processing for Electronics  Sensors and Spintronics Book
Author : Stephen J. Pearton,Cammy R. Abernathy,Fan Ren
Publisher : Springer Science & Business Media
Release : 2006-02-24
ISBN : 9781852339357
Language : En, Es, Fr & De

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Book Description :

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

Liquid Metal Alloys in Electronics

Liquid Metal Alloys in Electronics Book
Author : David J. Fisher
Publisher : Materials Research Forum LLC
Release : 2020-03-15
ISBN : 1644900696
Language : En, Es, Fr & De

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Book Description :

Liquid metal alloys are of rapidly increasing interest in electronics because they combine the high electrical conductivity of metals with the ease of manipulation and reconfiguration of liquids. The book focuses on such issues as self-assembled monolayers, energy-harvesting, reconfigurable and flexible antennae, sensors, conformable electronics, the creation of non-wetting super-hydrophobic or super-lyophobic surfaces, vacuum-assisted infiltration techniques, development of microfluidics, deformable electrodes and wearable electronics. The book references 270 original resources and includes their direct web link for in-depth reading. Keywords: Liquid Metals, Gallium-Indium Alloys, Galinstan, EGaIn, Self-Assembled Monolayers, Energy-Harvesting, Reconfigurable Antennae, Sensors, Conformable Electrodes, Stretchable Wires and Interconnects, Self-Healing Circuits, Gallium-Lyophilic Surfaces, Wettability of Liquid Metal, Substrate Topology, Selective Wetting Deposition Technique, Gallium-Indium Droplets on Thin Metal Films, Substrate Texture upon Wetting, Dielectrophoresis, Microfluidics, Deformable Electrodes, Wearable Electronics, Flexible Antennae, Surface Oxidation of Alloys.

GaN Transistors for Efficient Power Conversion

GaN Transistors for Efficient Power Conversion Book
Author : Alex Lidow,Michael de Rooij,Johan Strydom,David Reusch,John Glaser
Publisher : John Wiley & Sons
Release : 2019-08-23
ISBN : 1119594375
Language : En, Es, Fr & De

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Book Description :

An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Gallium Nitride and Silicon Carbide Power Technologies 7

Gallium Nitride and Silicon Carbide Power Technologies 7 Book
Author : M. Dudley,M. Bakowski,N. Ohtani,B. Raghothamachar,K. Shenai
Publisher : The Electrochemical Society
Release : 2022-11-29
ISBN : 1607688247
Language : En, Es, Fr & De

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Book Description :

Download Gallium Nitride and Silicon Carbide Power Technologies 7 book written by M. Dudley,M. Bakowski,N. Ohtani,B. Raghothamachar,K. Shenai, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Handbook of Flexible and Stretchable Electronics

Handbook of Flexible and Stretchable Electronics Book
Author : Muhammad M. Hussain,Nazek El-Atab
Publisher : CRC Press
Release : 2019-11-11
ISBN : 1351623109
Language : En, Es, Fr & De

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Book Description :

Flexibility and stretchability of electronics are crucial for next generation electronic devices that involve skin contact sensing and therapeutic actuation. This handbook provides a complete entrée to the field, from solid-state physics to materials chemistry, processing, devices, performance, and reliability testing, and integrated systems development. This work shows how microelectronics, signal processing, and wireless communications in the same circuitry are impacting electronics, healthcare, and energy applications. Key Features: • Covers the fundamentals to device applications, including solid-state and mechanics, chemistry, materials science, characterization techniques, and fabrication; • Offers a comprehensive base of knowledge for moving forward in this field, from foundational research to technology development; • Focuses on processing, characterization, and circuits and systems integration for device applications; • Addresses the basic physical properties and mechanics, as well as the nuts and bolts of reliability and performance analysis; • Discusses various technology applications, from printed electronics to logic and memory devices, sensors, actuators, displays, and energy storage and harvesting. This handbook will serve as the one-stop knowledge base for readership who are interested in flexible and stretchable electronics.

Thermal Management for LED Applications

Thermal Management for LED Applications Book
Author : Clemens J.M. Lasance,András Poppe
Publisher : Springer Science & Business Media
Release : 2013-09-17
ISBN : 1461450918
Language : En, Es, Fr & De

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Book Description :

Thermal Management for LED Applications provides state-of-the-art information on recent developments in thermal management as it relates to LEDs and LED-based systems and their applications. Coverage begins with an overview of the basics of thermal management including thermal design for LEDs, thermal characterization and testing of LEDs, and issues related to failure mechanisms and reliability and performance in harsh environments. Advances and recent developments in thermal management round out the book with discussions on advances in TIMs (thermal interface materials) for LED applications, advances in forced convection cooling of LEDs, and advances in heat sinks for LED assemblies.

Aircraft Thermal Management

Aircraft Thermal Management Book
Author : Mark Ahlers
Publisher : SAE International
Release : 2016-05-02
ISBN : 0768082978
Language : En, Es, Fr & De

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Book Description :

Aircraft thermal management (ATM) is increasingly important to the design and operation of commercial and military aircraft due to rising heat loads from expanded electronic functionality, electric systems architectures, and the greater temperature sensitivity of composite materials compared to metallic structures. It also impacts engine fuel consumption associated with removing waste heat from an aircraft. More recently the advent of more electric architectures on aircraft, such as the Boeing 787, has led to increased interest in the development of more efficient ATM architectures by the commercial airplane manufacturers. The ten papers contained in this book describe aircraft thermal management system architectures designed to minimize airplane performance impacts which could be applied to commercial or military aircraft. Additional information on Aircraft Thermal Management System Architectures is available from SAE AIR 5744 issued by the AC-9 Aircraft Environmental System Committee and the SAE book Aircraft Thermal Management Integrated Analysis (PT-178). SAE AIR 5744 defines the discipline of aircraft thermal management system engineering while Aircraft Thermal Management Integrated Analysis discusses approaches to computer simulation of the simultaneous operation of all systems affecting thermal management on an aircraft.

Extreme Environment Electronics

Extreme Environment Electronics Book
Author : John D. Cressler,H. Alan Mantooth
Publisher : CRC Press
Release : 2017-12-19
ISBN : 1351832808
Language : En, Es, Fr & De

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Book Description :

Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

Nanopackaging

Nanopackaging Book
Author : James E. Morris
Publisher : Springer
Release : 2018-09-22
ISBN : 3319903624
Language : En, Es, Fr & De

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Book Description :

This book presents a comprehensive overview of nanoscale electronics and systems packaging, and covers nanoscale structures, nanoelectronics packaging, nanowire applications in packaging, and offers a roadmap for future trends. Composite materials are studied for high-k dielectrics, resistors and inductors, electrically conductive adhesives, conductive "inks," underfill fillers, and solder enhancement. The book is intended for industrial and academic researchers, industrial electronics packaging engineers who need to keep abreast of progress in their field, and others with interests in nanotechnology. It surveys the application of nanotechnologies to electronics packaging, as represented by current research across the field.

Gallium Nitride and Related Wide Bandgap Materials and Devices

Gallium Nitride and Related Wide Bandgap Materials and Devices Book
Author : R. Szweda
Publisher : Elsevier
Release : 2000-07-07
ISBN : 9780080532301
Language : En, Es, Fr & De

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Book Description :

The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Nitride Semiconductor Technology

Nitride Semiconductor Technology Book
Author : Fabrizio Roccaforte,Michael Leszczynski
Publisher : John Wiley & Sons
Release : 2020-07-17
ISBN : 3527825258
Language : En, Es, Fr & De

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Book Description :

The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.

Power Electronics Handbook

Power Electronics Handbook Book
Author : Muhammad H. Rashid
Publisher : Butterworth-Heinemann
Release : 2017-09-09
ISBN : 0128114088
Language : En, Es, Fr & De

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Book Description :

Power Electronics Handbook, Fourth Edition, brings together over 100 years of combined experience in the specialist areas of power engineering to offer a fully revised and updated expert guide to total power solutions. Designed to provide the best technical and most commercially viable solutions available, this handbook undertakes any or all aspects of a project requiring specialist design, installation, commissioning and maintenance services. Comprising a complete revision throughout and enhanced chapters on semiconductor diodes and transistors and thyristors, this volume includes renewable resource content useful for the new generation of engineering professionals. This market leading reference has new chapters covering electric traction theory and motors and wide band gap (WBG) materials and devices. With this book in hand, engineers will be able to execute design, analysis and evaluation of assigned projects using sound engineering principles and adhering to the business policies and product/program requirements. Includes a list of leading international academic and professional contributors Offers practical concepts and developments for laboratory test plans Includes new technical chapters on electric vehicle charging and traction theory and motors Includes renewable resource content useful for the new generation of engineering professionals