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Thermal Management Of Gallium Nitride Electronics

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Gallium Nitride Electronics

Gallium Nitride Electronics Book
Author : Rüdiger Quay
Publisher : Springer Science & Business Media
Release : 2008-04-05
ISBN : 9783540718925
Language : En, Es, Fr & De

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Book Description :

This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

III Nitride Electronic Devices

III Nitride Electronic Devices Book
Author : Rongming Chu,Keisuke Shinohara
Publisher : Academic Press
Release : 2019-10
ISBN : 0128175443
Language : En, Es, Fr & De

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Book Description :

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field

Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique

Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique Book
Author : N.A
Publisher : Stanford University
Release : 2011
ISBN :
Language : En, Es, Fr & De

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Book Description :

Gallium nitride is an important material for the production of next-generation visible and near-UV optical devices, as well as for high temperature electronic amplifiers and circuits; however there has been no bulk method for the production of GaN substrates for device layer growth. Instead, thick GaN layers are heteroepitaxially deposited onto non-native substrates (usually sapphire) by one of two vapor phase epitaxy (VPE) techniques: MOVPE (metalorganic VPE) or HVPE (hydride VPE). Each method has its strengths and weaknesses: MOVPE has precise growth rate and layer thickness control but it is slow and expensive; HVPE is a low-cost method for high rate deposition of thick GaN, but it lacks the precise control and heterojunction layer growth required for device structures. Because of the large (14%) lattice mismatch, GaN grown on sapphire requires the prior deposition of a low temperature MOVPE nucleation layer using a second growth process in a separate deposition system. Here we present a novel hybrid VPE system incorporating elements of both techniques, allowing MOVPE and HVPE in a single growth run. In this way, a thick GaN layer can be produced directly on sapphire. GaN growth commences as small (50-100 nm diameter) coherent strained 3-dimensional islands which coalesce into a continuous film, after which 2-dimensional layer growth commences. The coalescence of islands imparts significant stress into the growing film, which increases with the film thickness until catastrophic breakage occurs, in-situ. Additionally, the mismatch in thermal expansion rates induces compressive stress upon cooling from the growth temperature of 1025ºC. We demonstrate a growth technique that mitigates these stresses, by using a 2-step growth sequence: an initial high growth rate step resulting in a pitted but relaxed film, followed by a low growth rate smoothing layer. As a result, thick (> 50 µm) and freestanding films have been grown successfully. X-ray rocking curve linewidth of 105 arcseconds and 10K PL indicating no "yellow" emission indicate that the material quality is higher than that produced by conventional MOVPE. By further modifying the hybrid system to include a metallic Mn source, it is possible to grow a doped semi-insulating GaN template for use in high frequency electronics devices.

Advanced Materials for Thermal Management of Electronic Packaging

Advanced Materials for Thermal Management of Electronic Packaging Book
Author : Xingcun Colin Tong
Publisher : Springer Science & Business Media
Release : 2011-01-05
ISBN : 9781441977595
Language : En, Es, Fr & De

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Book Description :

The need for advanced thermal management materials in electronic packaging has been widely recognized as thermal challenges become barriers to the electronic industry’s ability to provide continued improvements in device and system performance. With increased performance requirements for smaller, more capable, and more efficient electronic power devices, systems ranging from active electronically scanned radar arrays to web servers all require components that can dissipate heat efficiently. This requires that the materials have high capability of dissipating heat and maintaining compatibility with the die and electronic packaging. In response to critical needs, there have been revolutionary advances in thermal management materials and technologies for active and passive cooling that promise integrable and cost-effective thermal management solutions. This book meets the need for a comprehensive approach to advanced thermal management in electronic packaging, with coverage of the fundamentals of heat transfer, component design guidelines, materials selection and assessment, air, liquid, and thermoelectric cooling, characterization techniques and methodology, processing and manufacturing technology, balance between cost and performance, and application niches. The final chapter presents a roadmap and future perspective on developments in advanced thermal management materials for electronic packaging.

Characteristics Optimization and Integrated Circuit Applications of Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors

Characteristics  Optimization  and Integrated Circuit Applications of Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors Book
Author : Bruce McRae Green
Publisher :
Release : 2001
ISBN :
Language : En, Es, Fr & De

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Book Description :

Optimized AlGaN/GaN HEMT's based on this process produced 14.1 W (9.4 W/mm) of pulsed RF power at 8 GHz at 43% power added efficiency (PAE). Wideband circuits made using this process produced 5--7.5 W of CW power over a DC-8 GHz bandwidth, maintaining>20% PAE over the entire band. These state-of-the-art device and circuit results are at least a factor of four above and beyond what is possible using standard GaAs-based technologies.

ITHERM

ITHERM Book
Author : N.A
Publisher :
Release : 2004
ISBN :
Language : En, Es, Fr & De

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Book Description :

Senate Report

Senate Report Book
Author : N.A
Publisher : Government Printing Office
Release : 19??
ISBN :
Language : En, Es, Fr & De

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Book Description :

Electronic Materials and Processes Handbook

Electronic Materials and Processes Handbook Book
Author : Charles A. Harper
Publisher : McGraw Hill Professional
Release : 2003-08-07
ISBN : 9780071402149
Language : En, Es, Fr & De

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Book Description :

Electronic materials are the actual semiconductors, plastics, metals and ceramics that make up the chips and packages from which we construct today’s cell phones, palmtops, and PDAs. The switch in applications from PCs to smaller communications devices has driven the micro-miniaturization trend in electronics, which in turn has created a new set of challenges in creating materials to meet their specifications. This new edition, the first update of the handbook since 1993, is a complete rewrite, reflecting the great importance of engineering materials for thermal management and flexibility and micro-miniature sizes. This new handbook will be an invaluable tool to anyone working electronic packaging, fabrication, or assembly design.

Heteroepitaxial Thick GaN Layers and Vertical High Power Devices by Selective Area MOCVD Growth

Heteroepitaxial Thick GaN Layers and Vertical High Power Devices by Selective Area MOCVD Growth Book
Author : Atsunori Tanaka
Publisher :
Release : 2019
ISBN :
Language : En, Es, Fr & De

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Book Description :

Gallium nitride (GaN) is now widely used in commercial white Light Emitting Diodes (LEDs) thanks to the emergence of high-brightness GaN blue LEDs in 1990s. In addition to its application in solid-state lighting, GaN has been also vowed as a strong contender for next-generation high power and frequency devices due to its high critical electric field (3.3 MV/cm) and high mobility of the 2-dimensional electron gas (2DEG) at the aluminum gallium nitride (AlGaN)/GaN interface. Lateral AlGaN/GaN high-electron-mobility-transistors (HEMTs) have been available as commercial off-the-shelf devices since 2005. However, with the demand for even higher power at reduced chip area and cost and with better thermal management at high currents, vertical device architectures have emerged as the chosen structure to meet these demands. But vertical devices that can hold high power require thick and high quality GaN layers. Recent developments of bulk GaN substrate growth technologies allowed vertical GaN device with thick drift layer to be more feasible. However, GaN substrate technology is challenged with cost, reliability and uniformity issues even at the currently commercially available 2" (diameter) substrates. Therefore, GaN vertical power devices on cheap substrates without compromising the GaN material quality remains to be of great interest. Si substrates with their fab-scale integrated circuit technology can propel the development of commercial vertical high power GaN devices. The biggest challenge for realizing thick GaN layers on Si to hold high voltage in the vertical direction is the large thermal and lattice mismatch between GaN and Si that leads to cracking of the GaN layers beyond only a few micrometers. In major part of this dissertation, we will focus on the epitaxy techniques of thick crack-free GaN layers on Si by selective area growth (SAG) and the fabrication of vertical GaN switches. The epitaxy technique developed in this work resulted in crack-free thick GaN layers on Si that are of high quality with low dislocation densities and low background doping in order to sustain high breakdown voltages. The developed processes hold the potential to significantly advance the fundamental electronic materials research in power devices and their efficient system level integration.

EDMO

EDMO     Book
Author : N.A
Publisher :
Release : 2002
ISBN :
Language : En, Es, Fr & De

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Book Description :

Technical Digest 2005

Technical Digest 2005 Book
Author : N.A
Publisher : Institute of Electrical & Electronics Engineers(IEEE)
Release : 2005
ISBN : 9780780392502
Language : En, Es, Fr & De

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Book Description :

Thermal Management Handbook For Electronic Assemblies

Thermal Management Handbook  For Electronic Assemblies Book
Author : Jerry E. Sergent,Al Krum,IMAPS (ISHM)
Publisher : McGraw Hill Professional
Release : 1998
ISBN : 9780070266995
Language : En, Es, Fr & De

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Book Description :

Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product. The "hands-on" guide to thermal management! In recent years, heat-sensitive electronic systems have been miniaturized far more than their heat-producing power supplies, leading to major design and reliability challenges — and making thermal management a critical design factor. This timely handbook covers all the practical issues that any packaging engineer must consider with regard to the thermal management of printed circuit boards, hybrid circuits, and multichip modules. Readers will also benefit from the extensive data on material properties and circuit functions, thus enabling more intelligent decisions at the design stage — and preventing thermal-related problems from occurring in the first place.

GaN and Related Alloys 2003

GaN and Related Alloys   2003  Book
Author : Hock Min Ng
Publisher :
Release : 2004-04-09
ISBN :
Language : En, Es, Fr & De

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Book Description :

Symposium Y, 'GaN and Related Alloys--2003,' [was] held December 1-5 at the 2003 MRS Fall Meeting in Boston, Massachusett