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Semiconductor Nanowires

Semiconductor Nanowires Book
Author : J Arbiol,Q Xiong
Publisher : Elsevier
Release : 2015-03-31
ISBN : 1782422633
Language : En, Es, Fr & De

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Book Description :

Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. Explores a selection of advanced materials for semiconductor nanowires Outlines key techniques for the property assessment and characterization of semiconductor nanowires Covers a broad range of applications across a number of fields

Semiconductor Nanowires

Semiconductor Nanowires Book
Author : Jie Xiang
Publisher : Royal Society of Chemistry
Release : 2014-12-05
ISBN : 1849738157
Language : En, Es, Fr & De

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Book Description :

A timely reference from leading experts on semiconductor nanowires and their applications.

Fundamental Properties of Semiconductor Nanowires

Fundamental Properties of Semiconductor Nanowires Book
Author : Naoki Fukata,Riccardo Rurali
Publisher : Springer Nature
Release : 2020-11-16
ISBN : 9811590508
Language : En, Es, Fr & De

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Book Description :

This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires’ growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functionalization: nanowires have a high surface-to-volume ratio and thus are well-suited to surface modification, which effectively functionalizes them. The book also discusses the latest advances in the study of impurity doping, a crucial process in nanowires. In addition, considerable attention is paid to characterization techniques such as nanoscale and in situ methods, which are indispensable for understanding the novel properties of nanowires. Theoretical calculations are also essential to understanding nanowires’ characteristics, particularly those that derive directly from their special nature as one-dimensional nanoscale structures. In closing, the book considers future applications of nanowire structures in devices such as FETs and lasers.

Advances in III V Semiconductor Nanowires and Nanodevices

Advances in III V Semiconductor Nanowires and Nanodevices Book
Author : Jianye Li,Deli Wang,Ray R. LaPierre
Publisher : Bentham Science Publishers
Release : 2011-09-09
ISBN : 9781608050529
Language : En, Es, Fr & De

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Book Description :

"Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"

Semiconductor Nanowires I Growth and Theory

Semiconductor Nanowires I  Growth and Theory Book
Author : Anonim
Publisher : Academic Press
Release : 2015-11-26
ISBN : 0128030445
Language : En, Es, Fr & De

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Book Description :

Semiconductor Nanowires: Part A, Number 93 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. Contains comments from leading contributors in the field semiconductor nanowires Provides reviews of the most important recent literature Presents a broad view, including an examination of semiconductor nanowires Comprises up to date advancements in the technological development of nanowire devices and systems, and is comprehensive enough to be used as a reference book on nanowires as well as a graduate student text book.

Novel Compound Semiconductor Nanowires

Novel Compound Semiconductor Nanowires Book
Author : Fumitaro Ishikawa,Irina Buyanova
Publisher : CRC Press
Release : 2017-10-17
ISBN : 1315340720
Language : En, Es, Fr & De

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Book Description :

One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

Semiconductor Nanowires II Properties and Applications

Semiconductor Nanowires II  Properties and Applications Book
Author : Anonim
Publisher : Academic Press
Release : 2016-01-11
ISBN : 0128041447
Language : En, Es, Fr & De

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Book Description :

Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. Includes experts contributors who review the most important recent literature Contains a broad view, including examination of semiconductor nanowires

Wide Band Gap Semiconductor Nanowires 1

Wide Band Gap Semiconductor Nanowires 1 Book
Author : Vincent Consonni,Guy Feuillet
Publisher : John Wiley & Sons
Release : 2014-08-08
ISBN : 1118984307
Language : En, Es, Fr & De

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Book Description :

GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.

Semiconductor Nanowires

Semiconductor Nanowires Book
Author : Yiying Wu
Publisher : Unknown
Release : 2002
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download Semiconductor Nanowires book written by Yiying Wu, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Nanowires and Nanobelts

Nanowires and Nanobelts Book
Author : Zhong Lin Wang
Publisher : Springer Science & Business Media
Release : 2013-06-05
ISBN : 0387287450
Language : En, Es, Fr & De

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Book Description :

Volume 1, Metal and Semiconductor Nanowires covers a wide range of materials systems, from noble metals (such as Au, Ag, Cu), single element semiconductors (such as Si and Ge), compound semiconductors (such as InP, CdS and GaAs as well as heterostructures), nitrides (such as GaN and Si3N4) to carbides (such as SiC). The objective of this volume is to cover the synthesis, properties and device applications of nanowires based on metal and semiconductor materials. The volume starts with a review on novel electronic and optical nanodevices, nanosensors and logic circuits that have been built using individual nanowires as building blocks. Then, the theoretical background for electrical properties and mechanical properties of nanowires is given. The molecular nanowires, their quantized conductance, and metallic nanowires synthesized by chemical technique will be introduced next. Finally, the volume covers the synthesis and properties of semiconductor and nitrides nanowires.

Semiconductor Nanowires

Semiconductor Nanowires Book
Author : Anonim
Publisher : Unknown
Release : 2006
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download Semiconductor Nanowires book written by , available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

III Nitride Semiconductor Nanowires

III Nitride Semiconductor Nanowires Book
Author : Tevye Ryan Kuykendall
Publisher : Unknown
Release : 2007
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download III Nitride Semiconductor Nanowires book written by Tevye Ryan Kuykendall, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Novel Compound Semiconductor Nanowires

Novel Compound Semiconductor Nanowires Book
Author : Fumitaro Ishikawa,Irina Buyanova
Publisher : CRC Press
Release : 2017-10-17
ISBN : 9814745774
Language : En, Es, Fr & De

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Book Description :

One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

Semiconductor Nanowires

Semiconductor Nanowires Book
Author : Vincent Carl Holmberg
Publisher : Unknown
Release : 2011
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Semiconductor nanowires are one-dimensional nanoscale systems that exhibit many unique properties. Their nanoscale size can lead to defect densities and impurity populations different than bulk materials, resulting in altered diffusion behavior and mechanical properties. Synthetic methods now support the large-scale production of semiconductor nanowires, enabling a new class of materials and devices that use macroscopic quantities of nanowires. These advances have created an opportunity to fabricate bulk structures which exhibit the unique physical properties of semiconductor nanowires, bridging the properties of a nanoscale system with macroscopic materials. High aspect ratio germanium nanowires were synthesized in supercritical organic solvents using colloidal gold nanocrystal seeds. The nanowires were chemically passivated inside the reactor system using in situ thermal hydrogermylation and thiolation. The chemical stability of the passivated nanowires was studied by exposure to highly corrosive and oxidative environments. Chemical surface functionalization of germanium nanowires was investigated by covalently tethering carboxylic acid groups to the surface, as a general platform for the further functionalization of nanowire surfaces with molecules such as polyethylene glycol. Surface functionalization with dopant-containing molecules was also explored as a potential route for doping nanowires. In addition, static charging was exploited in the development of an electrostatic deposition method for semiconductor nanowires. In situ transmission electron microscopy experiments were conducted on gold-seeded germanium nanowires encapsulated within a volume-restricting carbon shell. A depressed eutectic melting temperature was observed, along with strong capillary effects, and the solid-state diffusion of gold into the crystalline stem of the germanium nanowire, occurring at rates orders of magnitude slower than in the bulk. Copper, nickel, and gold diffusion in silicon nanowires were also investigated. The rate of gold diffusion was found to be a strong function of the amount of gold available to the system. Finally, germanium nanowires were found to exhibit exceptional mechanical properties, with bending strengths approaching that of an ideal, defect-free, perfect crystal, and strength-to-weight ratios greater than either Kevlar or carbon fiber. Macroscopic quantities of nanowires were used to fabricate large sheets of free-standing semiconductor nanowire fabric, and the physical, morphological, and optical properties of the material were investigated.

Wide Band Gap Semiconductor Nanowires 2

Wide Band Gap Semiconductor Nanowires 2 Book
Author : Vincent Consonni,Guy Feuillet
Publisher : John Wiley & Sons
Release : 2014-08-08
ISBN : 1118984285
Language : En, Es, Fr & De

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Book Description :

This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices

Fabrication and Characterization of Semiconductor Nanowires

Fabrication and Characterization of Semiconductor Nanowires Book
Author : Colm O'Regan
Publisher : LAP Lambert Academic Publishing
Release : 2016-01-15
ISBN : 9783659694592
Language : En, Es, Fr & De

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Book Description :

One-dimensional semiconductor nanowires are considered to be promising materials for future nanoelectronic applications. However, before these nanowires can be integrated into such devices, a thorough understanding of their growth behaviour is necessary. In particular, methods that allow the control over nanowire growth are deemed especially important, as it is these methods that will enable the control of nanowire dimensions such as length and diameter. The production of nanowires with high-aspect ratios is vital in order to take advantage of the unique properties experienced at the nanoscale, thus allowing us to maximise their use in next-generation electronics. Additionally, the development of low-resistivity interconnects is desirable in order to connect such nanowires in multi-nanowire components. Consequently, this book aims to discuss the synthesis and characterisation of semiconductor nanowires and metal interconnects, as they apply to future electronics applications.

Semiconductor Photonics Nano Structured Materials and Devices

Semiconductor Photonics  Nano Structured Materials and Devices Book
Author : Soo Jin Chua,Jing Hua Teng,O. Wada,R.M. De La Rue,Xiao Hong Tang
Publisher : Trans Tech Publications Ltd
Release : 2007-11-20
ISBN : 3038132233
Language : En, Es, Fr & De

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Book Description :

Volume is indexed by Thomson Reuters CPCI-S (WoS). This book consists of a collection of 74 original peer-reviewed papers. They cover a wide range of topics in the interesting field of nano-structure related semiconductor photonics; a field which encompasses quantum dots, quantum wire, nano-wire, nano-rods, nano-crystals, photonic crystals, ZnO-based materials, III-V compound semiconductors, Si photonics and organic optoelectronic devices.

Semiconductor Nanowires

Semiconductor Nanowires Book
Author : Anonim
Publisher : Unknown
Release : 2008
ISBN : 9781605110509
Language : En, Es, Fr & De

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Book Description :

Download Semiconductor Nanowires book written by , available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Semiconductor Nanowires and Nanowire Heterostructures for Nanophotonic Systems

Semiconductor Nanowires and Nanowire Heterostructures for Nanophotonic Systems Book
Author : Fang Qian
Publisher : Unknown
Release : 2007
ISBN : 9780549408970
Language : En, Es, Fr & De

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Book Description :

We then present studies carried out on the most basic homogeneous gallium nitride (GaN) nanowires. Room-temperature optical excitation of single GaN nanowires produced strong photoluminescence, and by optical pumping stimulated emission was observed with very low threshold. In addition, we described complementary doping of GaN nanowires and fabricate them as blue light-emitting diodes.

Synthesis Assembly and Integration of Semiconductor Nanowires

Synthesis  Assembly  and Integration of Semiconductor Nanowires Book
Author : Elena P. Pandres
Publisher : Unknown
Release : 2020
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Semiconductor nanowires are a class of highly anisotropic crystalline materials with nanoscale diameters and lengths that range from micrometers to millimeters. The electronic, optical, and mechanical properties of semiconductor nanowires can be considerably different than their bulk counterparts, making them attractive for a range of applications including sensors, energy storage, and quantum information systems. Solution-based synthesis is a promising strategy to produce semiconductor nanowires in a scalable, cost-effective matter. However, many solution-based methods are limited in their ability to produce nanowires with increasingly complex compositions-including doped, alloyed, and heterostructured architectures-as well as to rapidly screen synthetic parameters for combinatorial discovery and optimization. In addition, chemistries and growth dynamics can be difficult to track with nanowire syntheses that require high temperature and extreme pressure equipment. Moreover, the widespread integration of semiconductor nanowires into devices will also require new methods of assembly as well as careful consideration of surface chemistry. After an introduction to current methods of semiconductor nanowire synthesis, existing tactics for nanowire assembly, and strategies to improve the energy density of lithium ion batteries with group IV nanomaterials, this dissertation will cover three main topics related to (i) new synthetic methods for nanowire growth, (ii) a novel light-based nanowire assembly process, and (iii) the integration of nanowires into high-energy-density composite electrodes for lithium ion batteries. Herein, we demonstrate a new continuous-flow, laser-driven, nanowire growth process that exploits the light absorption of colloidal metal nanocrystals to drive semiconductor nanowire growth in an optically accessible reactor on the benchtop, potentially opening the door for both rapid screening of synthetic parameters as well as in situ studies of nanowire growth dynamics. Investigations of solution-based nanowire growth using this system establish that laser-driven syntheses can achieve rapid, on-demand growth of semiconductor nanowires. Importantly, the integration of nanowires into future device architectures will require a wide range of assembly strategies. While current solution-based nanowire assembly processes struggle to create deterministic heterojunctions, here, we demonstrate a novel example of nanowire assembly in a high-Prandtl-number organic solvent system, using an optical trap to orient, align, and "solder" metal-seeded semiconductor nanowires into periodic axial heterostructures. Finally, we investigate the role of surface functionalization on the integration of group-IV nanowires into high-capacity alloying electrodes for lithium ion batteries. We demonstrate that interfacial chemistry affects electrochemical access to different phases of lithiated germanium, and by carefully controlling the nanowire surface chemistry, we eliminate the need for the fluorinated electrolyte additives typically required for the stable cycling of group-IV-based, lithium-ion battery electrodes. In addition, we demonstrate that by balancing precursor decomposition kinetics, alloyed silicon-germanium (SiGe) nanowires can be synthesized through supercritical-fluid-based processes, potentially improving the rate capability of high-capacity silicon-based electrode materials produced via scalable processes. We anticipate that the information gained from these solution-based synthetic methods, assembly techniques, and surface chemistry studies will inform synthetic compositional control, elucidate relationships between solution-based reaction parameters and emergent properties, and advance the integration of solution-grown semiconductor nanowires into next-generation devices.