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Nanomaterials Based Charge Trapping Memory Devices

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Nanomaterials Based Charge Trapping Memory Devices

Nanomaterials Based Charge Trapping Memory Devices Book
Author : Ammar Nayfeh,Nazek El-Atab
Publisher : Elsevier
Release : 2020-05-27
ISBN : 012822343X
Language : En, Es, Fr & De

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Book Description :

Rising consumer demand for low power consumption electronics has generated a need for scalable and reliable memory devices with low power consumption. At present, scaling memory devices and lowering their power consumption is becoming more difficult due to unresolved challenges, such as short channel effect, Drain Induced Barrier Lowering (DIBL), and sub-surface punch-through effect, all of which cause high leakage currents. As a result, the introduction of different memory architectures or materials is crucial. Nanomaterials-based Charge Trapping Memory Devices provides a detailed explanation of memory device operation and an in-depth analysis of the requirements of future scalable and low powered memory devices in terms of new materials properties. The book presents techniques to fabricate nanomaterials with the desired properties. Finally, the book highlights the effect of incorporating such nanomaterials in memory devices. This book is an important reference for materials scientists and engineers, who are looking to develop low-powered solutions to meet the growing demand for consumer electronic products and devices. Explores in depth memory device operation, requirements and challenges Presents fabrication methods and characterization results of new nanomaterials using techniques, including laser ablation of nanoparticles, ALD growth of nano-islands, and agglomeration-based technique of nanoparticles Demonstrates how nanomaterials affect the performance of memory devices

Advances in Non volatile Memory and Storage Technology

Advances in Non volatile Memory and Storage Technology Book
Author : Yoshio Nishi
Publisher : Elsevier
Release : 2014-06-24
ISBN : 0857098098
Language : En, Es, Fr & De

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Book Description :

New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

State of the Art Program on Compound Semiconductors 56 SOTAPOCS 56

State of the Art Program on Compound Semiconductors 56  SOTAPOCS 56  Book
Author : J.-H. He,C. O'Dwyer,F. Ren,C. Jagadish,Y.-L. Chueh
Publisher : The Electrochemical Society
Release : 2014
ISBN : 160768554X
Language : En, Es, Fr & De

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Book Description :

Download State of the Art Program on Compound Semiconductors 56 SOTAPOCS 56 book written by J.-H. He,C. O'Dwyer,F. Ren,C. Jagadish,Y.-L. Chueh, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Charge Trapping Non Volatile Memories

Charge Trapping Non Volatile Memories Book
Author : Panagiotis Dimitrakis
Publisher : Springer
Release : 2015-08-05
ISBN : 3319152904
Language : En, Es, Fr & De

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Book Description :

This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.

Charge Trapping Non Volatile Memories

Charge Trapping Non Volatile Memories Book
Author : Panagiotis Dimitrakis
Publisher : Springer
Release : 2017-02-14
ISBN : 3319487051
Language : En, Es, Fr & De

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Book Description :

This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.

Advances in Non Volatile Memory and Storage Technology

Advances in Non Volatile Memory and Storage Technology Book
Author : Yoshio Nishi
Publisher : Woodhead Publishing
Release : 2017-11-13
ISBN : 9780081014189
Language : En, Es, Fr & De

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Book Description :

New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

Electrical Memory Materials and Devices

Electrical Memory Materials and Devices Book
Author : Wen-Chang Chen
Publisher : Royal Society of Chemistry
Release : 2015-10-21
ISBN : 1782621164
Language : En, Es, Fr & De

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Book Description :

Download Electrical Memory Materials and Devices book written by Wen-Chang Chen, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Non volatile Memory Using Embedded Gold Nanoparticles in Polymer Dielectric

Non volatile Memory Using Embedded Gold Nanoparticles in Polymer Dielectric Book
Author : Poh Choon Ooi
Publisher : Unknown
Release : 2013
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Many recent studies have been conducted on optically transparent and mechanically flexible polymer memory devices due to its additional benefits in comparison to conventional electronic devices for various applications, such as vision-free products, see-through electronic devices; head-up displays, and produces a class of system-on-glass for use in see through and flexible electronic devices. There are numerous studies on transparent and flexible non-volatile memory (NVM) based on organic thin film transistor (OTFT) using different charge trap mediums. Although some promising results have been achieved in OTFT study, however, the fabrication process is complicated with many stacking layers to achieve the bistable memory effect with three-terminal contacts to operate the transistors. Therefore, for simplicity and ease in fabrication while achieving the bistable memory effect, the transparent and flexible organic bistable device (OBD) has been designed as metal-insulator-semiconductor (MIS) structure with two-terminal contacts to operate the device and using metal nanoparticles as charge trap medium has been of interest lately. The advantages of metallic nanoparticles storage layers stem from the large work functions difference with Si substrate, which ensures deep potential wells that enhance carrier confinement; hence avoiding retention loss. In addition, noble metals such as gold do not oxidize and do not react with the surrounding dielectric layers. Hence, a simple fabrication route using a simple solution process to construct a large area, optically transparent and flexible memory based on MIS structure with embedded AuNPs is proposed in this study. The preliminary study has begun with the fabrication of opaque and rigid MIS memory devices using p-type Si substrate. The organic-inorganic (hybrid) dielectric polymethylsilsesquioxane (PMSSQ) embedded with gold nanoparticles (AuNPs) are used as the insulator layer and charge storage medium in the MIS structure. The use of polymer materials as insulator layer is driven by the possibility of enabling new applications in flexible and transparent electronic devices. Polymer materials offer an alternative fabrication process for the large area electronics, because it provides simpler process, lower cost, and higher throughput, compared with the vacuumdeposition- based process. In this preliminary study, spin-coating method is used to deposit the PMSSQ and AuNPs in polymer host. Subsequently, the electrical characterization has been performed on a MIS NVM device to understand the transport mechanisms through thin insulator and proposed. Although some promising memory characteristics have been obtained from preliminary study; however, spin-coating deposition of AuNPs in the polymer host results in high percentage of non-operational non-volatile memory devices due to the non-uniformly distributed AuNPs attributed to the centrifugal force during spin-coating. Therefore, a novel hydrothermally grown AuNPs directly on the Si substrate has been proposed to improve the distribution of AuNPs. Then, the research proceeds to realize transparent and flexible NVM devices using a simple solution process. Here, the MIS stacking structure is constructed on the flexible indium-tin-oxide (ITO) coated polyethylene terephthalate (PET) as a bottom transparent and conducting electrode, and the replacement of p-Si substrate with pentacene as an active layer. However, they also suffer non-uniformity in AuNPs due to spin-coating of PMSSQ. Lastly in an attempt to achieve non-volatile memory devices based on simple metal-insulatormetal (MIM) structure, AuNPs embedded in parylene-C with two sandwiching metals were realized. Electrical characterization has been performed on these MIM devices to examine and propose the charge transport mechanisms. As a result, it has better yield of operational nonvolatile memory devices because the vapor deposition of parylene does not disturbed the AuNPs. Further the parylene deposition does not introduce thermal stress on the flexible ITO coated PET substrate.

3D Stacked Chips

3D Stacked Chips Book
Author : Ibrahim (Abe) M. Elfadel,Gerhard Fettweis
Publisher : Springer
Release : 2016-05-11
ISBN : 3319204815
Language : En, Es, Fr & De

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Book Description :

This book explains for readers how 3D chip stacks promise to increase the level of on-chip integration, and to design new heterogeneous semiconductor devices that combine chips of different integration technologies (incl. sensors) in a single package of the smallest possible size. The authors focus on heterogeneous 3D integration, addressing some of the most important challenges in this emerging technology, including contactless, optics-based, and carbon-nanotube-based 3D integration, as well as signal-integrity and thermal management issues in copper-based 3D integration. Coverage also includes the 3D heterogeneous integration of power sources, photonic devices, and non-volatile memories based on new materials systems.

Nanocrystals in Nonvolatile Memory

Nanocrystals in Nonvolatile Memory Book
Author : Writam Banerjee
Publisher : CRC Press
Release : 2018-10-09
ISBN : 1351203258
Language : En, Es, Fr & De

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Book Description :

In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving element that have brought the nonvolatile flash memory technology to a distinguished height. However, new approaches are still required to strengthen this technology for future applications. This book details the methods of fabrication of nanocrystals and their application in baseline nonvolatile memory and emerging nonvolatile memory technologies. The chapters have been written by renowned experts of the field and will provide an in-depth understanding of these technologies. The book is a valuable tool for research and development sectors associated with electronics, semiconductors, nanotechnology, material sciences, solid state memories, and electronic devices.

IEEE Circuits Devices

IEEE Circuits   Devices Book
Author : Anonim
Publisher : Unknown
Release : 2006
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download IEEE Circuits Devices book written by , available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Memories for the Intelligent Internet of Things

Memories for the Intelligent Internet of Things Book
Author : Betty Prince,David Prince
Publisher : John Wiley & Sons
Release : 2018-04-18
ISBN : 1119298954
Language : En, Es, Fr & De

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Book Description :

A detailed, practical review of state-of-the-art implementations of memory in IoT hardware As the Internet of Things (IoT) technology continues to evolve and become increasingly common across an array of specialized and consumer product applications, the demand on engineers to design new generations of flexible, low-cost, low power embedded memories into IoT hardware becomes ever greater. This book helps them meet that demand. Coauthored by a leading international expert and multiple patent holder, this book gets engineers up to speed on state-of-the-art implementations of memory in IoT hardware. Memories for the Intelligent Internet of Things covers an array of common and cutting-edge IoT embedded memory implementations. Ultra-low-power memories for IoT devices-including plastic and polymer circuitry for specialized applications, such as medical electronics-are described. The authors explore microcontrollers with embedded memory used for smart control of a multitude of Internet devices. They also consider neuromorphic memories made in Ferroelectric RAM (FeRAM), Resistance RAM (ReRAM), and Magnetic RAM (MRAM) technologies to implement artificial intelligence (AI) for the collection, processing, and presentation of large quantities of data generated by IoT hardware. Throughout the focus is on memory technologies which are complementary metal oxide semiconductor (CMOS) compatible, including embedded floating gate and charge trapping EEPROM/Flash along with FeRAMS, FeFETs, MRAMs and ReRAMs. Provides a timely, highly practical look at state-of-the-art IoT memory implementations for an array of product applications Synthesizes basic science with original analysis of memory technologies for Internet of Things (IoT) based on the authors' extensive experience in the field Focuses on practical and timely applications throughout Features numerous illustrations, tables, application requirements, and photographs Considers memory related security issues in IoT devices Memories for the Intelligent Internet of Things is a valuable working resource for electrical engineers and engineering managers working in the electronics system and semiconductor industries. It is also an indispensable reference/text for graduate and advanced undergraduate students interested in the latest developments in integrated circuit devices and systems.

JJAP Letters

JJAP Letters Book
Author : Anonim
Publisher : Unknown
Release : 2007
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download JJAP Letters book written by , available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Emerging Resistive Switching Memories

Emerging Resistive Switching Memories Book
Author : Jianyong Ouyang
Publisher : Springer
Release : 2016-07-04
ISBN : 3319315722
Language : En, Es, Fr & De

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Book Description :

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

Nanocrystals Embedded Zirconium doped Hafnium Oxide High k Gate Dielectric Films

Nanocrystals Embedded Zirconium doped Hafnium Oxide High k Gate Dielectric Films Book
Author : Chen-Han Lin
Publisher : Unknown
Release : 2012
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Nanocrystals embedded zirconium-doped hafnium oxide (ZrHfO) high-k gate dielectric films have been studied for the applications of the future metal oxide semiconductor field effect transistor (MOSFET) and nonvolatile memory. ZrHfO has excellent gate dielectric properties and can be prepared into MOS structure with a low equivalent oxide thickness (EOT). Ruthenium (Ru) modification effects on the ZrHfO high-k MOS capacitor have been investigated. The bulk and interfacial properties changed with the inclusion of Ru nanoparticles. The permittivity of the ZrHfO film was increased while the energy depth of traps involved in the current transport was lowered. However, the barrier height of titanium nitride (TiN)/ZrHfO was not affected by the Ru nanoparticles. These results can be important to the novel metal gate/high-k/Si MOS structure. The Ru-modified ZrHfO gate dielectric film showed a large breakdown voltage and a long lifetime. The conventional polycrystalline Si (poly-Si) charge trapping layer can be replaced by the novel floating gate structure composed of discrete nanodots embedded in the high-k film. By replacing the SiO2 layer with the ZrHfO film, promising memory functions, e.g., low programming voltage and long charge retention time, can be expected. In this study, the ZrHfO high-k MOS capacitors that separately contain nanocrystalline ruthenium oxide (nc-RuO), indium tin oxide (nc-ITO), and zinc oxide (nc-ZnO) have been successfully fabricated by the sputtering deposition method followed with the rapid thermal annealing process. Material and electrical properties of these kinds of memory devices have been investigated using analysis tools such as XPS, XRD, and HRTEM; electrical characterizations such as C-V, J-V, CVS, and frequency-dependent measurements. All capacitors showed an obvious memory window contributed by the charge trapping effect. The formation of the interface at the nc-RuO/ZrHfO and nc-ITO/ZrHfO contact regions was confirmed by the XPS spectra. Charges were deeply trapped to the bulk nanocrystal sites. However, a portion of holes were loosely trapped at the nanocrystal/ZrHfO interface. Charges trapped to the different sites lead to different detrapping characteristics. For further improving the memory functions, the dual-layer nc-ITO and -ZnO embedded ZrHfO gate dielectric stacks have been fabricated. The dual-layer embedded structure contains two vertically-separated nanocrystal layers with a higher density than the single-layer embedded structure. The critical memory functions, e.g., memory window, programming efficiency, and charge retention can be improved by using the dual-layer nanocrystals embedded floating gate structure. This kind of gate dielectric stack is vital for the next-generation nonvolatile memory applications.

Utilizing the Size Dependent Crystallinity Catalytic Activity and Charge Retention Characteristics of Ultrafine Sub 2 Nm Pt Nanoparticles in Electrochemical electrical Systems

Utilizing the Size Dependent Crystallinity  Catalytic Activity and Charge Retention Characteristics of Ultrafine Sub 2 Nm Pt Nanoparticles in Electrochemical electrical Systems Book
Author : Somik Mukherjee
Publisher : Unknown
Release : 2015
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

This dissertation aims to explore and discuss the size dependent application of tilted target sputtered sub-2 nm Pt nanoparticles (NPs) in certain electrochemical/electrical systems. The stability of these Pt NPs, with narrow size distributions and large areal densities, on different supporting surfaces was studied to better understand the role of NP size and surface adhesive forces governing the issue of active surface area loss, a notable concern in systems utilizing Pt NPs as catalysts. From an applications standpoint, with the purpose of analysing the effect of charge transfer characteristics and crystallinity of sub-2 nm Pt NPs in driving reaction kinetics, these Pt NPs were utilized at dye sensitized solar cell (DSSC) counter electrodes order to efficiently realize the triiodide reduction reaction at the counter electrode of DSSCs. While exploring the stability of these sub-2 nm Pt NPs in acidic environments, evidence of size-dependent hydrogen spillover was also observed for these NPs and a correlation between NP size, crystallinity, support characteristics, and hydrogen spillover was explored. While uncapped Pt NPs are utilized for catalytic applications, to take advantage of their size dependent charge trapping characteristics, capped Pt NPs are typically utilized within electronic devices. To study the electronic properties of these Pt NPs for device applications, these Pt NPs were electrically probed while embedded within a dielectric film. These Pt NP embedded dielectrics (Al2O3 in this study) were studied with intended application in non-volatile memory devices and the role of defects at the Pt NP/dielectric interface in determining the resultant device characteristics was also explored.

Journal of Nanoscience and Nanotechnology

Journal of Nanoscience and Nanotechnology Book
Author : Anonim
Publisher : Unknown
Release : 2007
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download Journal of Nanoscience and Nanotechnology book written by , available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Proceedings of the IEEE Conference on Nanotechnology

Proceedings of the     IEEE Conference on Nanotechnology Book
Author : Anonim
Publisher : Unknown
Release : 2004
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download Proceedings of the IEEE Conference on Nanotechnology book written by , available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Charge Dynamics in Polymer nanoparticle Blends for Nonvolatile Memory

Charge Dynamics in Polymer nanoparticle Blends for Nonvolatile Memory Book
Author : Michael S. Griffo
Publisher : Unknown
Release : 2009
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download Charge Dynamics in Polymer nanoparticle Blends for Nonvolatile Memory book written by Michael S. Griffo, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.