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Molecular Beam Epitaxy

Molecular Beam Epitaxy Book
Author : Marian A. Herman,Helmut Sitter
Publisher : Springer Science & Business Media
Release : 2013-03-08
ISBN : 3642970982
Language : En, Es, Fr & De

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Book Description :

This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.

Molecular Beam Epitaxy

Molecular Beam Epitaxy Book
Author : Hajime Asahi,Yoshiji Horikoshi
Publisher : Wiley
Release : 2019-04-22
ISBN : 111935501X
Language : En, Es, Fr & De

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Book Description :

Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

Molecular Beam Epitaxy

Molecular Beam Epitaxy Book
Author : Mohamed Henini
Publisher : Elsevier
Release : 2018-06-27
ISBN : 0128121378
Language : En, Es, Fr & De

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Book Description :

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Molecular Beam Epitaxy

Molecular Beam Epitaxy Book
Author : John Wilfred Orton,Tom Foxon
Publisher : Oxford University Press, USA
Release : 2015
ISBN : 0199695822
Language : En, Es, Fr & De

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Book Description :

The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.

Materials Fundamentals of Molecular Beam Epitaxy

Materials Fundamentals of Molecular Beam Epitaxy Book
Author : Jeffrey Y. Tsao
Publisher : Academic Press
Release : 2012-12-02
ISBN : 0080571352
Language : En, Es, Fr & De

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Book Description :

The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE. * Provides comprehensive treatment of the basic materials and surface science principles that apply to molecular beam epitaxy * Thorough enough to benefit molecular beam epitaxy researchers * Broad enough to benefit materials, surface, and device researchers * Referenes articles at the forefront of modern research as well as those of historical interest

The Technology and Physics of Molecular Beam Epitaxy

The Technology and Physics of Molecular Beam Epitaxy Book
Author : E.H.C. Parker
Publisher : Springer
Release : 2013-11-12
ISBN : 9781489953667
Language : En, Es, Fr & De

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Book Description :

Download The Technology and Physics of Molecular Beam Epitaxy book written by E.H.C. Parker, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Molecular Beam Epitaxy

Molecular Beam Epitaxy Book
Author : R. F. C. Farrow
Publisher : William Andrew
Release : 1995
ISBN : 9780815513711
Language : En, Es, Fr & De

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Book Description :

In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.

Molecular Beam Epitaxy

Molecular Beam Epitaxy Book
Author : Brian R. Pamplin
Publisher : Elsevier
Release : 2013-10-22
ISBN : 1483155331
Language : En, Es, Fr & De

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Book Description :

Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semiconductor surface and crystal physics is also considered. This book is comprised of eight chapters and opens with an overview of MBE as a crystal growth technique. The discussion then turns to the deposition of semiconductor superlattices of GaAs by MBE; important factors that must be considered in the design of a MBE system such as flux uniformity, crucible volume, heat shielding, source baffling, and shutters; and control of stoichiometry deviation in MBE growth of compound semiconductors, along with the effects of such deviation on the electronic properties of the grown films. The following chapters focus on the use of MBE techniques for growth of IV-VI optoelectronic devices; for fabrication of integrated optical devices; and for the study of semiconductor surface and crystal physics. The final chapter examines a superlattice consisting of a periodic sequence of ultrathin p- and n-doped semiconductor layers, possibly with intrinsic layers in between. This monograph will be of interest to chemists, physicists, and crystallographers.

Silicon Molecular Beam Epitaxy

Silicon Molecular Beam Epitaxy Book
Author : E. Kasper
Publisher : CRC Press
Release : 2018-05-04
ISBN : 1351085069
Language : En, Es, Fr & De

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Book Description :

This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Molecular Beam Epitaxy

Molecular Beam Epitaxy Book
Author : Robin F.C. Farrow
Publisher : Elsevier
Release : 1995-12-31
ISBN : 0815518404
Language : En, Es, Fr & De

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Book Description :

In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.

Molecular Beam Epitaxy 1994

Molecular Beam Epitaxy 1994 Book
Author : Anonim
Publisher : Unknown
Release : 1995
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download Molecular Beam Epitaxy 1994 book written by , available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Molecular Beam Epitaxy and Heterostructures

Molecular Beam Epitaxy and Heterostructures Book
Author : L.L. Chang,K. Ploog
Publisher : Springer
Release : 2011-10-13
ISBN : 9789401087445
Language : En, Es, Fr & De

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Book Description :

The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.

Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy

Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy Book
Author : Nikolai N. Ledentsov
Publisher : Springer Science & Business Media
Release : 1999-07-02
ISBN : 9783540657941
Language : En, Es, Fr & De

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Book Description :

The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion. It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.

Molecular Beam Epitaxy Growth and Characterization of ZnO based Layers and Heterostructures

Molecular Beam Epitaxy Growth and Characterization of ZnO based Layers and Heterostructures Book
Author : Abdelhamid Abdelrehim Mahmoud Elshaer
Publisher : Cuvillier Verlag
Release : 2008
ISBN : 386727701X
Language : En, Es, Fr & De

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Book Description :

Download Molecular Beam Epitaxy Growth and Characterization of ZnO based Layers and Heterostructures book written by Abdelhamid Abdelrehim Mahmoud Elshaer, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Molecular Beam Epitaxy of Graphene on Gold Foils Growth and Characterization

Molecular Beam Epitaxy of Graphene on Gold Foils  Growth and Characterization Book
Author : Anand Sampat
Publisher : GRIN Verlag
Release : 2013-01-21
ISBN : 365635605X
Language : En, Es, Fr & De

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Book Description :

Master's Thesis from the year 2012 in the subject Materials Science, University of California, Berkeley , language: English, abstract: The application of graphene for large-area electronics requires controllable growth of single crystalline quasi-freestanding graphene films. Controllable growth of graphene films on gold foils at various temperatures using molecular beam epitaxy is shown. Film quality and electrical characteristics probed using Hall measurement, Raman spectroscopy, and Rutherford backscattering spectrometry are shown to improve at lower temperature possibly peaking at ~825 ̊C. Further experiments are required to assess a stronger correlation between growth parameters and film characteristics. In particular, varying carbon flux and increasing the number of growths are discussed.

Silicon Molecular Beam Epitaxy

Silicon Molecular Beam Epitaxy Book
Author : E. Kasper,E.H.C. Parker
Publisher : Elsevier
Release : 2012-12-02
ISBN : 0080983685
Language : En, Es, Fr & De

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Book Description :

This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.

Molecular Beam Epitaxy

Molecular Beam Epitaxy Book
Author : John R. Arthur
Publisher : Unknown
Release : 1984
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download Molecular Beam Epitaxy book written by John R. Arthur, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Silicon Molecular Beam Epitaxy

Silicon Molecular Beam Epitaxy Book
Author : Erich Kasper,E. H. C. Parker
Publisher : North Holland
Release : 1990
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping.

Papers from the 16th North American Conference on Molecular Beam Epitaxy

Papers from the 16th North American Conference on Molecular Beam Epitaxy Book
Author : Keith R. Evans
Publisher : Unknown
Release : 1998
ISBN : 9781563968211
Language : En, Es, Fr & De

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Book Description :

Download Papers from the 16th North American Conference on Molecular Beam Epitaxy book written by Keith R. Evans, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Gas Source Molecular Beam Epitaxy

Gas Source Molecular Beam Epitaxy Book
Author : Morton B. Panish,Henryk Temkin
Publisher : Springer Science & Business Media
Release : 2013-03-07
ISBN : 3642781276
Language : En, Es, Fr & De

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Book Description :

The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.