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Germanium Based Technologies

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Germanium Based Technologies

Germanium Based Technologies Book
Author : Cor Claeys,Eddy Simoen
Publisher : Elsevier
Release : 2011-07-28
ISBN : 9780080474908
Language : En, Es, Fr & De

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Book Description :

Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. State-of-the-art information available for the first time as an all-in-source Extensive reference list making it an indispensable reference book Broad coverage from fundamental aspects up to industrial applications

Metal Impurities in Silicon and Germanium Based Technologies

Metal Impurities in Silicon  and Germanium Based Technologies Book
Author : Cor Claeys,Eddy Simoen
Publisher : Springer
Release : 2018-08-13
ISBN : 3319939254
Language : En, Es, Fr & De

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Book Description :

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

SiGe Based Technologies

SiGe Based Technologies Book
Author : Y. Shiraki,T.P. Pearsall,E. Kasper
Publisher : Elsevier
Release : 1993-02-18
ISBN : 0444596895
Language : En, Es, Fr & De

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Book Description :

The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.

SiGe and Ge

SiGe and Ge Book
Author : David Louis Harame
Publisher : The Electrochemical Society
Release : 2006-01-01
ISBN : 1566775078
Language : En, Es, Fr & De

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Book Description :

The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

Millimeter Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon Germanium Technology

Millimeter Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon Germanium Technology Book
Author : Dietmar Kissinger
Publisher : Springer Science & Business Media
Release : 2012-03-09
ISBN : 1461422892
Language : En, Es, Fr & De

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Book Description :

The book presents the analysis and design of integrated automotive radar receivers in Silicon-Germanium technology, for use in complex multi-channel radar transceiver front-ends in the 77GHz frequency band. The main emphasis of the work is the realization of high-linearity and low-power modular receiver channels as well as the investigation of millimeter-wave integrated test concepts for the receiver front-end.

Advanced Material and Device Applications with Germanium

Advanced Material and Device Applications with Germanium Book
Author : Sanghyun Lee
Publisher : BoD – Books on Demand
Release : 2018-10-03
ISBN : 1789840317
Language : En, Es, Fr & De

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Book Description :

Germanium is an elemental semiconductor, which played an important role in the birth of the semiconductor but soon was replaced with silicon. However, germanium is poised to make a remarkable comeback in the semiconductor industry. With this increasing attention, this book describes the fundamental aspects of germanium and its applications. The contributing authors are experts in their field with great in-depth knowledge. The authors strongly feel that this contribution might be of interest to readers and help to expand the scope of their knowledge.

Silicon Germanium and Their Alloys

Silicon  Germanium  and Their Alloys Book
Author : Gudrun Kissinger,Sergio Pizzini
Publisher : CRC Press
Release : 2014-12-09
ISBN : 1466586648
Language : En, Es, Fr & De

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Book Description :

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.

High Mobility and Quantum Well Transistors

High Mobility and Quantum Well Transistors Book
Author : Geert Hellings,Kristin De Meyer
Publisher : Springer Science & Business Media
Release : 2013-03-25
ISBN : 9400763409
Language : En, Es, Fr & De

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Book Description :

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.

Current Trends in Heterojunction Bipolar Transistors

Current Trends in Heterojunction Bipolar Transistors Book
Author : M. F. Chang
Publisher : World Scientific
Release : 1996
ISBN : 9789810220976
Language : En, Es, Fr & De

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Book Description :

Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.

Ultra Clean Processing of Semiconductor Surfaces XIII

Ultra Clean Processing of Semiconductor Surfaces XIII Book
Author : Paul W. Mertens,Marc Meuris,Marc Heyns
Publisher : Trans Tech Publications Ltd
Release : 2016-09-05
ISBN : 3035730849
Language : En, Es, Fr & De

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Book Description :

This volume contains the proceedings of 13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS 2016, Knokke, Belgium, September 12-14, 2016) (www.ucpss.org) and includes studies on cleaning such as particle removal using acoustic enhancement, removal of metallic contamination, pattern collapse of fine flexible and fragile features, wetting and drying issues, control and measuring of contamination . FEOL and BEOL topics cover: chemistry of semiconductor surfaces, cleaning related to new gate stacks, cleaning at the interconnect level, selective wet etching, resist strip and polymer removal, cleaning and contamination control for various new materials and cleaning after Chemical-Mechanical-Polishing (CMP).

Extended Defects in Germanium

Extended Defects in Germanium Book
Author : Cor Claeys,Eddy Simoen
Publisher : Springer Science & Business Media
Release : 2008-12-29
ISBN : 3540856145
Language : En, Es, Fr & De

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Book Description :

The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.

Novel Silicon Based Technologies

Novel Silicon Based Technologies Book
Author : North Atlantic Treaty Organization. Scientific Affairs Division
Publisher : Springer Science & Business Media
Release : 1991
ISBN : 9780792311126
Language : En, Es, Fr & De

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Book Description :

Eight contributions address: GaAs on Si, ion beam synthesis in silicon, ion beam processing of chemical vapor deposited silicon layers, technology and devices for silicon based three-dimensional circuits, integrated fabrication of micromechanical structures on silicon, micromachining of silicon for

Material Science and Engineering Technology III

Material Science and Engineering Technology III Book
Author : Osman Adiguzel
Publisher : Trans Tech Publications Ltd
Release : 2015-04-29
ISBN : 303826914X
Language : En, Es, Fr & De

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Book Description :

Collection of selected, peer reviewed papers from the 2014 3rd International Conference on Material Science and Engineering Technology (ICMSET 2014), October 24-26, 2014, Beijing, China. The 93 papers are grouped as follows: Chapter 1: Advanced Composites, Special Materials and Technologies, Applied Materials; Chapter 2: Solid State Materials, Alloys, Reiforced and Functional Materials; Chapter 3: Chemical and Biomaterials; Chapter 4: Earth, Building and Construction Materials; Chapter 5: Materials Processing Engineering, Surface and Coating; Chapter 6: Modelling Analysis and Simulation for Materials

Microwave De embedding

Microwave De embedding Book
Author : Giovanni Crupi,Dominique Schreurs
Publisher : Academic Press
Release : 2013-11-09
ISBN : 0124045928
Language : En, Es, Fr & De

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Book Description :

This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies. With this book you will learn: The theoretical background of high-frequency de-embedding for measurements, modelling, and design Details on applying the de-embedding concept to the transistor’s linear, non-linear, and noise behaviour The impact of de-embedding on low-noise and power amplifier design The recent advances and future trends in the field of high-frequency de-embedding Presents the theory and practice of microwave de-embedding, from the basic principles to recent advances and future trends Written by experts in the field, all of whom are leading researchers in the area Each chapter describes theoretical background and gives experimental results and practical applications Includes forewords by Giovanni Ghione and Stephen Maas

Gettering and Defect Engineering in Semiconductor Technology XII

Gettering and Defect Engineering in Semiconductor Technology XII Book
Author : Anna Cavallini,Hans Richter,Martin Kittler,Sergio Pizzini
Publisher : Trans Tech Publications Ltd
Release : 2007-10-25
ISBN : 3038131946
Language : En, Es, Fr & De

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Book Description :

Volume is indexed by Thomson Reuters CPCI-S (WoS). This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed

Control Components Using Si GaAs and GaN Technologies

Control Components Using Si  GaAs  and GaN Technologies Book
Author : Inder J. Bahl
Publisher : Artech House
Release : 2014-09-01
ISBN : 1608077128
Language : En, Es, Fr & De

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Book Description :

Control circuits are important parts of RF and microwave systems. Their compact size, high performance, and low cost have played a vital role in the development of cost effective solutions and new applications during the past quarter century. This book provides a comprehensive treatment of such circuits, including device operation and their models, basic circuit theory and designs, and applications. The unique features of this book include in-depth and comprehensive study of control circuits, extensive design equations and figures, treatment of practical aspect of circuits and description of fabrication technologies. It provides you with a broad view of solid state control circuits including various technologies and their comparison and up to date information.

Gettering and Defect Engineering in Semiconductor Technology XV

Gettering and Defect Engineering in Semiconductor Technology XV Book
Author : J.D. Murphy
Publisher : Trans Tech Publications Ltd
Release : 2013-10-07
ISBN : 3038262056
Language : En, Es, Fr & De

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Book Description :

The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.

Electrical Overstress EOS

Electrical Overstress  EOS  Book
Author : Steven H. Voldman
Publisher : John Wiley & Sons
Release : 2013-08-27
ISBN : 1118703332
Language : En, Es, Fr & De

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Book Description :

Electrical Overstress (EOS) continues to impact semiconductor manufacturing, semiconductor components and systems as technologies scale from micro- to nano-electronics. This bookteaches the fundamentals of electrical overstress and how to minimize and mitigate EOS failures. The text provides a clear picture of EOS phenomena, EOS origins, EOS sources, EOS physics, EOS failure mechanisms, and EOS on-chip and system design. It provides an illuminating insight into the sources of EOS in manufacturing, integration of on-chip, and system level EOS protection networks, followed by examples in specific technologies, circuits, and chips. The book is unique in covering the EOS manufacturing issues from on-chip design and electronic design automation to factory-level EOS program management in today’s modern world. Look inside for extensive coverage on: Fundamentals of electrical overstress, from EOS physics, EOS time scales, safe operating area (SOA), to physical models for EOS phenomena EOS sources in today’s semiconductor manufacturing environment, and EOS program management, handling and EOS auditing processing to avoid EOS failures EOS failures in both semiconductor devices, circuits and system Discussion of how to distinguish between EOS events, and electrostatic discharge (ESD) events (e.g. such as human body model (HBM), charged device model (CDM), cable discharge events (CDM), charged board events (CBE), to system level IEC 61000-4-2 test events) EOS protection on-chip design practices and how they differ from ESD protection networks and solutions Discussion of EOS system level concerns in printed circuit boards (PCB), and manufacturing equipment Examples of EOS issues in state-of-the-art digital, analog and power technologies including CMOS, LDMOS, and BCD EOS design rule checking (DRC), LVS, and ERC electronic design automation (EDA) and how it is distinct from ESD EDA systems EOS testing and qualification techniques, and Practical off-chip ESD protection and system level solutions to provide more robust systems Electrical Overstress (EOS): Devices, Circuits and Systems is a continuation of the author’s series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the nano-electronic era.