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Finfet Modeling For Ic Simulation And Design

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FinFET Modeling for IC Simulation and Design

FinFET Modeling for IC Simulation and Design Book
Author : Yogesh Singh Chauhan,Darsen Duane Lu,Vanugopalan Sriramkumar,Sourabh Khandelwal,Juan Pablo Duarte,Navid Payvadosi,Ai Niknejad,Chenming Hu
Publisher : Academic Press
Release : 2015-03-17
ISBN : 0124200850
Language : En, Es, Fr & De

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Book Description :

This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts’ insight into the specifications of the standard The first book on the industry-standard FinFET model - BSIM-CMG

BSIM4 and MOSFET Modeling For IC Simulation

BSIM4 and MOSFET Modeling For IC Simulation Book
Author : Anonim
Publisher : Unknown
Release : 2021-10-23
ISBN : 9814390968
Language : En, Es, Fr & De

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Book Description :

Download BSIM4 and MOSFET Modeling For IC Simulation book written by , available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Industry Standard FDSOI Compact Model BSIM IMG for IC Design

Industry Standard FDSOI Compact Model BSIM IMG for IC Design Book
Author : Chenming Hu,Sourabh Khandelwal,Yogesh Singh Chauhan,Thomas Mckay,Josef Watts,Juan Pablo Duarte,Pragya Kushwaha,Harshit Agarwal
Publisher : Woodhead Publishing
Release : 2019-05-21
ISBN : 0081024029
Language : En, Es, Fr & De

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Book Description :

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model. Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model Explains the complex operation of the FDSOI device and its use of two independent control inputs Addresses the parameter extraction challenges for those using this model

Semiconductor Nanotechnology

Semiconductor Nanotechnology Book
Author : Stephen M. Goodnick,Anatoli Korkin,Robert Nemanich
Publisher : Springer
Release : 2018-07-26
ISBN : 3319918966
Language : En, Es, Fr & De

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Book Description :

This book presents research dedicated to solving scientific and technological problems in many areas of electronics, photonics and renewable energy. Energy and information are interconnected and are essential elements for the development of human society. Transmission, processing and storage of information requires energy consumption, while the efficient use and access to new energy sources requires new information (ideas and expertise) and the design of novel systems such as photovoltaic devices, fuel cells and batteries. Semiconductor physics creates the knowledge base for the development of information (computers, cell phones, etc.) and energy (photovoltaic) technologies. The exchange of ideas and expertise between these two technologies is critical and expands beyond semiconductors. Continued progress in information and renewable energy technologies requires miniaturization of devices and reduction of costs, energy and material consumption. The latest generation of electronic devices is now approaching nanometer scale dimensions, new materials are being introduced into electronics manufacturing at an unprecedented rate, and alternative technologies to mainstream CMOS are evolving. Nanotechnology is widely accepted as a source of potential solutions in securing future progress for information and energy technologies. Semiconductor Nanotechnology features chapters that cover the following areas: atomic scale materials design, bio- and molecular electronics, high frequency electronics, fabrication of nanodevices, magnetic materials and spintronics, materials and processes for integrated and subwave optoelectronics, nanoCMOS, new materials for FETs and other devices, nanoelectronics system architecture, nano optics and lasers, non-silicon materials and devices, chemical and biosensors, quantum effects in devices, nano science and technology applications in the development of novel solar energy devices, and fuel cells and batteries.

BSIM4 and MOSFET Modeling for IC Simulation

BSIM4 and MOSFET Modeling for IC Simulation Book
Author : Weidong Liu,Chenming Hu
Publisher : World Scientific
Release : 2011
ISBN : 9812813993
Language : En, Es, Fr & De

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Book Description :

This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

FinFET Devices for VLSI Circuits and Systems

FinFET Devices for VLSI Circuits and Systems Book
Author : Samar K. Saha
Publisher : CRC Press
Release : 2020-07-15
ISBN : 0429998090
Language : En, Es, Fr & De

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Book Description :

To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.

Mitigating Process Variability and Soft Errors at Circuit Level for FinFETs

Mitigating Process Variability and Soft Errors at Circuit Level for FinFETs Book
Author : Alexandra Zimpeck
Publisher : Springer Nature
Release : 2021-10-23
ISBN : 3030683680
Language : En, Es, Fr & De

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Book Description :

Download Mitigating Process Variability and Soft Errors at Circuit Level for FinFETs book written by Alexandra Zimpeck, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Artificial Intelligence and Algorithms in Intelligent Systems

Artificial Intelligence and Algorithms in Intelligent Systems Book
Author : Radek Silhavy
Publisher : Springer
Release : 2018-05-26
ISBN : 3319911899
Language : En, Es, Fr & De

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Book Description :

This book presents the latest trends and approaches in artificial intelligence research and its application to intelligent systems. It discusses hybridization of algorithms, new trends in neural networks, optimisation algorithms and real-life issues related to the application of artificial methods. The book constitutes the second volume of the refereed proceedings of the Artificial Intelligence and Algorithms in Intelligent Systems of the 7th Computer Science On-line Conference 2018 (CSOC 2018), held online in April 2018.

Physics of Semiconductor Devices

Physics of Semiconductor Devices Book
Author : Simon M. Sze,Yiming Li,Kwok K. Ng
Publisher : John Wiley & Sons
Release : 2021-03-24
ISBN : 1119429137
Language : En, Es, Fr & De

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Book Description :

The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.

Junctionless Field Effect Transistors

Junctionless Field Effect Transistors Book
Author : Shubham Sahay,Mamidala J. Kumar
Publisher : Wiley-IEEE Press
Release : 2019-02-27
ISBN : 1119523532
Language : En, Es, Fr & De

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Book Description :

A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

Filter Design Solutions for RF systems

Filter Design Solutions for RF systems Book
Author : Leonardo Pantoli,Vincenzo Stornelli
Publisher : MDPI
Release : 2020-11-19
ISBN : 3039435477
Language : En, Es, Fr & De

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Book Description :

This Special Issue focuses on the state-of-the-art results from the definition and design of filters for low- and high-frequency applications and systems. Different technologies and solutions are commonly adopted for filter definition, from electrical to electromechanical and mechanical solutions, from passive to active devices, and from hybrid to integrated designs. Aspects related to both theoretical and experimental research in filter design, CAD modeling and novel technologies and applications, as well as filter fabrication, characterization and testing, are covered. The proposed research articles deal with different topics as follows: Modeling, design and simulation of filters; Processes and fabrication technologies for filters; Automated characterization and test of filters; Voltage and current mode filters; Integrated and discrete filters; Passive and active filters; Variable filters, characterization and tunability.

BSIM4 and MOSFET Modeling for IC Simulation

BSIM4 and MOSFET Modeling for IC Simulation Book
Author : Weidong Liu,Chenming Hu
Publisher : World Scientific
Release : 2011
ISBN : 9812568638
Language : En, Es, Fr & De

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Book Description :

This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

5G Mobile Communications

5G Mobile Communications Book
Author : Wei Xiang,Kan Zheng,Xuemin (Sherman) Shen
Publisher : Springer
Release : 2016-10-13
ISBN : 3319342088
Language : En, Es, Fr & De

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Book Description :

This book provides a comprehensive overview of the emerging technologies for next-generation 5G mobile communications, with insights into the long-term future of 5G. Written by international leading experts on the subject, this contributed volume covers a wide range of technologies, research results, and networking methods. Key enabling technologies for 5G systems include, but are not limited to, millimeter-wave communications, massive MIMO technology and non-orthogonal multiple access. 5G will herald an even greater rise in the prominence of mobile access based upon both human-centric and machine-centric networks. Compared with existing 4G communications systems, unprecedented numbers of smart and heterogeneous wireless devices will be accessing future 5G mobile systems. As a result, a new paradigm shift is required to deal with challenges on explosively growing requirements in mobile data traffic volume (1000x), number of connected devices (10–100x), typical end-user data rate (10–100x), and device/network lifetime (10x). Achieving these ambitious goals calls for revolutionary candidate technologies in future 5G mobile systems. Designed for researchers and professionals involved with networks and communication systems, 5G Mobile Communications is a straightforward, easy-to-read analysis of the possibilities of 5G systems.

Physical Design for 3D Integrated Circuits

Physical Design for 3D Integrated Circuits Book
Author : Aida Todri-Sanial,Chuan Seng Tan
Publisher : CRC Press
Release : 2017-12-19
ISBN : 1498710379
Language : En, Es, Fr & De

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Book Description :

Physical Design for 3D Integrated Circuits reveals how to effectively and optimally design 3D integrated circuits (ICs). It also analyzes the design tools for 3D circuits while exploiting the benefits of 3D technology. The book begins by offering an overview of physical design challenges with respect to conventional 2D circuits, and then each chapter delivers an in-depth look at a specific physical design topic. This comprehensive reference: Contains extensive coverage of the physical design of 2.5D/3D ICs and monolithic 3D ICs Supplies state-of-the-art solutions for challenges unique to 3D circuit design Features contributions from renowned experts in their respective fields Physical Design for 3D Integrated Circuits provides a single, convenient source of cutting-edge information for those pursuing 2.5D/3D technology.

Digitally Assisted Analog and Analog Assisted Digital IC Design

Digitally Assisted Analog and Analog Assisted Digital IC Design Book
Author : Xicheng Jiang
Publisher : Cambridge University Press
Release : 2015-07-23
ISBN : 1316368742
Language : En, Es, Fr & De

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Book Description :

Achieve enhanced performance with this guide to cutting-edge techniques for digitally-assisted analog and analog-assisted digital integrated circuit design. • Discover how architecture and circuit innovations can deliver improved performance in terms of speed, density, power, and cost • Learn about practical design considerations for high-performance scaled CMOS processes, FinFet devices and architectures, and the implications of FD SOI technology • Get up to speed with established circuit techniques that take advantage of scaled CMOS process technology in analog, digital, RF and SoC designs, including digitally-assisted techniques for data converters, DSP enabled frequency synthesizers, and digital controllers for switching power converters. With detailed descriptions, explanations, and practical advice from leading industry experts, this is an ideal resource for practicing engineers, researchers, and graduate students working in circuit design.

FinFET Devices for VLSI Circuits and Systems

FinFET Devices for VLSI Circuits and Systems Book
Author : Samar K. Saha
Publisher : CRC Press
Release : 2020-07-15
ISBN : 0429998082
Language : En, Es, Fr & De

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Book Description :

To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.

Computer Aided Design of Micro and Nanoelectronic Devices

Computer Aided Design of Micro  and Nanoelectronic Devices Book
Author : Chinmay Kumar Maiti
Publisher : World Scientific
Release : 2016-10-27
ISBN : 9814713090
Language : En, Es, Fr & De

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Book Description :

Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools. Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text. Contents:IntroductionSimulation ToolsSimulation MethodologyCMOS TechnologyStress-Engineered CMOSHeterojunction Bipolar TransistorsStress-Engineered HBTsFinFETsAdvanced DevicesMemory DevicesPower DevicesSolar CellsHeterojunction Solar CellsSPICE Parameter Extraction Readership: Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics.

Toward Quantum FinFET

Toward Quantum FinFET Book
Author : Weihua Han,Zhiming M. Wang
Publisher : Springer Science & Business Media
Release : 2013-11-23
ISBN : 3319020218
Language : En, Es, Fr & De

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Book Description :

This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices

Mathematical Compact Models of Advanced Transistors for Numerical Simulation and Hardware Design

Mathematical Compact Models of Advanced Transistors for Numerical Simulation and Hardware Design Book
Author : Juan Pablo Duarte
Publisher : Unknown
Release : 2018
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Mathematical compact models play a key role in designing integrated circuits. They serve as a medium of information exchange between foundries and designers. A compact model, which is a set of long mathematical equations based on the physics of each transistor, is capable of reproducing the very complex transistor characteristics in an accurately, fast, and robust manner. This dissertation presents the latest research on compact models for advanced transistor technologies: FinFETs, Ultra-thin body SOIs (UTBSOIs), Gate-All-Around (GAA) FETs, and Negative Capacitance (NC) FETs. Since traditional transistor scaling had reached limitations due short-channel effects and oxide tunneling, the introduction of FinFET and UTBSOIs in high-volume manufacturing at 20nm, 14nm and 10nm technology nodes had let the electronic industry to keep obtaining performance and density advantages in technology scaling. For smaller nodes such as 5nm, and 3nm, GAA FETs transistors are expected to replace traditional transistors. Production ready compact model for current and future FinFETs are presented in this thesis. The Unified Compact Model can model FinFETs with realistic fin shapes including rectangle, triangle, circle and any shape in between. A new quantum effects model will also be presented, it enables accurate modeling of III-V FinFETs. Shape agnostic short-channel effect model for aggressive $L_G$ scaling and body bias model for FinFETs on bulk substrates are also included in this work. This computationally efficient model is an ideal turn-key solution for simulation and design of future heterogeneous circuits. For extremely scaled technologies, NC-FETs are quickly emerging as preferred candidates for digital and analog applications. The recent discovery of ferroelectric (FE) materials using conventional CMOS fabrication technology has led to the first demonstrations of FE based NC-FETs. The ferroelectric material layer added over the transistor gate insulator help in several device aspects, it suppress short-channel effects, increase on-current due voltage amplification, increase output resistance in short-channel devices, etc. These exciting characteristics has created an urgency for analysis and understanding of device operation and circuit performance, where numerical simulation and compact models are playing a key role. This thesis gives insights into the device physics and behavior of FE based negative capacitance FinFETs (NC-FinFETs) by presenting numerical simulations, compact models, and circuit evaluation of these devices. NC-FinFETs may have a floating metal between FE and the dielectric layers, where a lumped charge model represents such a device. For a NC-FinFET without a floating metal, the distributed charge model should be used, and at each point in the channel the FE layer will impact the local channel charge. This distributed effect has important implications on device characteristics. These device differences are explained using numerical simulation and correctly captured by the proposed compact models. The presented compact models have been implemented in commercial circuit simulators for exploring circuits based on NC-FinFET technology. Circuit simulations show that a quasi-adiabatic mechanism of the ferroelectric layer in the NC-FinFET recovers part of the energy during the switching process of transistors, helping to minimize the energy losses of the wasteful energy dissipation nature of conventional transistor circuits. As circuit load capacitances further increase, $V_{DD}$ scaling becomes more dominant on energy reduction of NC-FinFET based circuits.

Technology Computer Aided Design for Si SiGe and GaAs Integrated Circuits

Technology Computer Aided Design for Si  SiGe and GaAs Integrated Circuits Book
Author : G.A. Armstrong,C.K. Maiti
Publisher : IET
Release : 2007-11-30
ISBN : 0863417434
Language : En, Es, Fr & De

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Book Description :

The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.