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Ferroelectricity In Doped Hafnium Oxide Materials Properties And Devices

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Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide Book
Author : Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo
Publisher : Woodhead Publishing
Release : 2019-03-27
ISBN : 0081024312
Language : En, Es, Fr & De

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Book Description :

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Negative Capacitance in Ferroelectric Materials

Negative Capacitance in Ferroelectric Materials Book
Author : Michael Hoffmann
Publisher : BoD – Books on Demand
Release : 2020-09-15
ISBN : 3751999361
Language : En, Es, Fr & De

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Book Description :

This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films Book
Author : Ekaterina Yurchuk
Publisher : Logos Verlag Berlin GmbH
Release : 2015-06-30
ISBN : 3832540032
Language : En, Es, Fr & De

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Book Description :

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Ceramic Abstracts

Ceramic Abstracts Book
Author : American Ceramic Society
Publisher : Unknown
Release : 1997
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download Ceramic Abstracts book written by American Ceramic Society, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

6th Forum on New Materials

6th Forum on New Materials   Book
Author : Pietro Vincenzini
Publisher : Trans Tech Publications Ltd
Release : 2014-10-31
ISBN : 3038266922
Language : En, Es, Fr & De

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Book Description :

Collection of selected, peer reviewed papers from the 6th Forum on New Materials, part of CIMTEC 2014-13th International Ceramics Congress and 6th Forum on New Materials, June 15-19, 2014, Montecatini Terme, Italy. The 32 papers are grouped as follows: Chapter 1: Novel Functional Carbon Nanomaterials, Chapter 2: Transport in Inorganic Materials, Chapter 3: Non-Volatile Inorganic Memory Devices, Chapter 4: Novel Superconducting Materials.

Ferroelectric Gate Field Effect Transistor Memories

Ferroelectric Gate Field Effect Transistor Memories Book
Author : Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon
Publisher : Springer Nature
Release : 2020-03-23
ISBN : 9811512124
Language : En, Es, Fr & De

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Book Description :

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Advanced Materials Forum III

Advanced Materials Forum III Book
Author : Paula M. Vilarinho
Publisher : Trans Tech Publications Ltd
Release : 2006-05-15
ISBN : 3038130443
Language : En, Es, Fr & De

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Book Description :

Volume is indexed by Thomson Reuters CPCI-S (WoS). The aim of this book is to provide the reader with the latest advanced research results on, and an improved understanding of, various aspects of the processing and characterization of materials.

Advanced Materials

Advanced Materials Book
Author : Ivan A. Parinov,Shun-Hsyung Chang,Banh Tien Long
Publisher : Springer Nature
Release : 2020-06-16
ISBN : 3030451208
Language : En, Es, Fr & De

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Book Description :

This book presents selected peer-reviewed contributions from the 2019 International Conference on “Physics and Mechanics of New Materials and Their Applications”, PHENMA 2019 (Hanoi, Vietnam, 7–10 November, 2019), divided into four scientific themes: processing techniques, physics, mechanics, and applications of advanced materials. The book describes a broad spectrum of promising nanostructures, crystals, materials and composites with special properties. It presents nanotechnology approaches, modern environmentally friendly techniques and physical-chemical and mechanical studies of the structural-sensitive and physical–mechanical properties of materials. The obtained results are based on new achievements in material sciences and computational approaches, methods and algorithms (in particular, finite-element and finite-difference modeling) applied to the solution of different technological, mechanical and physical problems. The obtained results have a significant interest for theory, modeling and test of advanced materials. Other results are devoted to promising devices demonstrating high accuracy, longevity and new opportunities to work effectively under critical temperatures and high pressures, in aggressive media, etc. These devices demonstrate improved comparative characteristics, caused by developed materials and composites, allowing investigation of physio-mechanical processes and phenomena based on scientific and technological progress.

Gate Stack Engineering for Emerging Polarization based Non volatile Memories

Gate Stack Engineering for Emerging Polarization based Non volatile Memories Book
Author : Milan Pesic
Publisher : BoD – Books on Demand
Release : 2017-07-14
ISBN : 3744867889
Language : En, Es, Fr & De

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Book Description :

The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.

Physics Briefs

Physics Briefs Book
Author : Anonim
Publisher : Unknown
Release : 1989-07
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download Physics Briefs book written by , available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

BTL Talks and Papers

BTL Talks and Papers Book
Author : Bell Telephone Laboratories, inc. Technical Information Libraries
Publisher : Unknown
Release : 1980
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download BTL Talks and Papers book written by Bell Telephone Laboratories, inc. Technical Information Libraries, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Chemical Abstracts

Chemical Abstracts Book
Author : Anonim
Publisher : Unknown
Release : 2002
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download Chemical Abstracts book written by , available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

Japanese Journal of Applied Physics

Japanese Journal of Applied Physics Book
Author : Anonim
Publisher : Unknown
Release : 2007
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download Japanese Journal of Applied Physics book written by , available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.

11th International Ceramics Congress

11th International Ceramics Congress Book
Author : P. Vincenzini
Publisher : Trans Tech Publications Ltd
Release : 2006-10-10
ISBN : 3038130931
Language : En, Es, Fr & De

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Book Description :

This collection presents selected papers from over one thousand scientific and technical contributions effectively presented at CIMTEC 2006. Altogether, the collection offers an outstanding wealth of up-to-date information on this field.

Issues in Materials and Manufacturing Research 2011 Edition

Issues in Materials and Manufacturing Research  2011 Edition Book
Author : Anonim
Publisher : ScholarlyEditions
Release : 2012-01-09
ISBN : 1464963304
Language : En, Es, Fr & De

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Book Description :

Issues in Materials and Manufacturing Research: 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Materials and Manufacturing Research. The editors have built Issues in Materials and Manufacturing Research: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Materials and Manufacturing Research in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Materials and Manufacturing Research: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Euro Ceramics V

Euro Ceramics V Book
Author : P. Abélard,J. Baxter,D. Bortzmeyer
Publisher : Trans Tech Publications Ltd
Release : 1997-04-15
ISBN : 3035703647
Language : En, Es, Fr & De

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Book Description :

Comprising more than 580 papers, the aim of this 3-volume set is to provide the reader with a comprehensive overview of the relevant trends in the research and development of all aspects of ceramics. It will constitute an excellent reference source for every researcher working in the field.

Solid State Abstracts Journal

Solid State Abstracts Journal Book
Author : Anonim
Publisher : Unknown
Release : 1984
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

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Comprehensive Dissertation Index

Comprehensive Dissertation Index Book
Author : Anonim
Publisher : Unknown
Release : 1989
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

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International Aerospace Abstracts

International Aerospace Abstracts Book
Author : Anonim
Publisher : Unknown
Release : 1989
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

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Chemical Vapor Deposition 1960 1980

Chemical Vapor Deposition  1960 1980 Book
Author : Donald T. Hawkins
Publisher : Springer
Release : 1981-11-30
ISBN : 0987650XXX
Language : En, Es, Fr & De

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Book Description :

Download Chemical Vapor Deposition 1960 1980 book written by Donald T. Hawkins, available in PDF, EPUB, and Kindle, or read full book online anywhere and anytime. Compatible with any devices.