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Ferroelectricity In Doped Hafnium Oxide Materials Properties And Devices

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Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide Book
Author : Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo
Publisher : Woodhead Publishing
Release : 2019-03-27
ISBN : 0081024312
Language : En, Es, Fr & De

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Book Description :

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Negative Capacitance in Ferroelectric Materials

Negative Capacitance in Ferroelectric Materials Book
Author : Michael Hoffmann
Publisher : BoD – Books on Demand
Release : 2020-09-15
ISBN : 3751999361
Language : En, Es, Fr & De

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Book Description :

This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.

Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors

Development and Investigation of Novel Logic in Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors Book
Author : Evelyn Tina Breyer
Publisher : BoD – Books on Demand
Release : 2022-02-08
ISBN : 3755708523
Language : En, Es, Fr & De

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Book Description :

Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).

Ferroelectric Gate Field Effect Transistor Memories

Ferroelectric Gate Field Effect Transistor Memories Book
Author : Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon
Publisher : Springer Nature
Release : 2020-03-23
ISBN : 9811512124
Language : En, Es, Fr & De

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Book Description :

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Memristive Devices for Brain Inspired Computing

Memristive Devices for Brain Inspired Computing Book
Author : Sabina Spiga,Abu Sebastian,Damien Querlioz,Bipin Rajendran
Publisher : Woodhead Publishing
Release : 2020-06-12
ISBN : 0081027877
Language : En, Es, Fr & De

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Book Description :

Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications—Computational Memory, Deep Learning, and Spiking Neural Networks reviews the latest in material and devices engineering for optimizing memristive devices beyond storage applications and toward brain-inspired computing. The book provides readers with an understanding of four key concepts, including materials and device aspects with a view of current materials systems and their remaining barriers, algorithmic aspects comprising basic concepts of neuroscience as well as various computing concepts, the circuits and architectures implementing those algorithms based on memristive technologies, and target applications, including brain-inspired computing, computational memory, and deep learning. This comprehensive book is suitable for an interdisciplinary audience, including materials scientists, physicists, electrical engineers, and computer scientists. Provides readers an overview of four key concepts in this emerging research topic including materials and device aspects, algorithmic aspects, circuits and architectures and target applications Covers a broad range of applications, including brain-inspired computing, computational memory, deep learning and spiking neural networks Includes perspectives from a wide range of disciplines, including materials science, electrical engineering and computing, providing a unique interdisciplinary look at the field

Solid State Chemistry and its Applications

Solid State Chemistry and its Applications Book
Author : Anthony R. West
Publisher : John Wiley & Sons
Release : 2022-04-06
ISBN : 1118695577
Language : En, Es, Fr & De

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Book Description :

SOLID STATE CHEMISTRY AND ITS APPLICATIONS A comprehensive treatment of solid state chemistry complete with supplementary material and full colour illustrations from a leading expert in the field. Solid State Chemistry and its Applications, Second Edition delivers an advanced version of West’s classic text in solid state chemistry, expanding on the undergraduate Student Edition to present a comprehensive treatment of solid state chemistry suitable for advanced students and researchers. The book provides the reader with an up-to-date account of essential topics in solid state chemistry and recent developments in this rapidly developing field of inorganic chemistry. Significant updates and new content in this second edition include: A more extensive overview of important families of inorganic solids including spinels, perovskites, pyrochlores, garnets, Ruddlesden-Popper phases and many more New methods to synthesise inorganic solids, including sol-gel methods, combustion synthesis, atomic layer deposition, spray pyrolysis and microwave techniques Advances in electron microscopy, X-ray and electron spectroscopies New developments in electrical properties of materials, including high Tc superconductivity, lithium batteries, solid oxide fuel cells and smart windows Recent developments in optical properties, including fibre optics, solar cells and transparent conducting oxides Advances in magnetic properties including magnetoresistance and multiferroic materials Homogeneous and heterogeneous ceramics, characterization using impedance spectroscopy Thermoelectric materials, MXenes, low dimensional structures, memristors and many other functional materials Expanded coverage of glass, including metallic and fluoride glasses, cement and concrete, geopolymers, refractories and structural ceramics Overview of binary oxides of all the elements, their structures, properties and applications Featuring full color illustrations throughout, readers will also benefit from online supplementary materials including access to CrystalMaker® software and over 100 interactive crystal structure models. Perfect for advanced students seeking a detailed treatment of solid state chemistry, this new edition of Solid State Chemistry and its Applications will also earn a place as a desk reference in the libraries of experienced researchers in chemistry, crystallography, physics, and materials science.

Intelligent Circuits and Systems

Intelligent Circuits and Systems Book
Author : Rajesh Singh,Anita Gehlot
Publisher : CRC Press
Release : 2021-08-01
ISBN : 1000404897
Language : En, Es, Fr & De

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Book Description :

ICICS-2020 is the third conference initiated by the School of Electronics and Electrical Engineering at Lovely Professional University that explored recent innovations of researchers working for the development of smart and green technologies in the fields of Energy, Electronics, Communications, Computers, and Control. ICICS provides innovators to identify new opportunities for the social and economic benefits of society. This conference bridges the gap between academics and R&D institutions, social visionaries, and experts from all strata of society to present their ongoing research activities and foster research relations between them. It provides opportunities for the exchange of new ideas, applications, and experiences in the field of smart technologies and finding global partners for future collaboration. The ICICS-2020 was conducted in two broad categories, Intelligent Circuits & Intelligent Systems and Emerging Technologies in Electrical Engineering.

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics Book
Author : D. Nirmal,J. Ajayan,Patrick J. Fay
Publisher : CRC Press
Release : 2021-12-10
ISBN : 1000475360
Language : En, Es, Fr & De

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Book Description :

This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films Book
Author : Ekaterina Yurchuk
Publisher : Logos Verlag Berlin GmbH
Release : 2015-06-30
ISBN : 3832540032
Language : En, Es, Fr & De

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Book Description :

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Advances in Non volatile Memory and Storage Technology

Advances in Non volatile Memory and Storage Technology Book
Author : Yoshio Nishi,Blanka Magyari-Kope
Publisher : Woodhead Publishing
Release : 2019-06-15
ISBN : 0081025858
Language : En, Es, Fr & De

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Book Description :

Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory

Formation of Ferroelectricity in Hafnium Oxide Based Thin Films

Formation of Ferroelectricity in Hafnium Oxide Based Thin Films Book
Author : Tony Schenk
Publisher : BoD – Books on Demand
Release : 2017-03-15
ISBN : 3743127296
Language : En, Es, Fr & De

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Book Description :

In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.

Metal Oxides for Non volatile Memory

Metal Oxides for Non volatile Memory Book
Author : Panagiotis Dimitrakis,Ilia Valov,Stefan Tappertzhofen
Publisher : Elsevier
Release : 2022-03-10
ISBN : 0128146303
Language : En, Es, Fr & De

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Book Description :

Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology

Deep Learning Classifiers with Memristive Networks

Deep Learning Classifiers with Memristive Networks Book
Author : Alex Pappachen James
Publisher : Springer
Release : 2019-04-08
ISBN : 3030145247
Language : En, Es, Fr & De

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Book Description :

This book introduces readers to the fundamentals of deep neural network architectures, with a special emphasis on memristor circuits and systems. At first, the book offers an overview of neuro-memristive systems, including memristor devices, models, and theory, as well as an introduction to deep learning neural networks such as multi-layer networks, convolution neural networks, hierarchical temporal memory, and long short term memories, and deep neuro-fuzzy networks. It then focuses on the design of these neural networks using memristor crossbar architectures in detail. The book integrates the theory with various applications of neuro-memristive circuits and systems. It provides an introductory tutorial on a range of issues in the design, evaluation techniques, and implementations of different deep neural network architectures with memristors.

Development of HfO2 Based Ferroelectric Memories for Future CMOS Technology Nodes

Development of HfO2 Based Ferroelectric Memories for Future CMOS Technology Nodes Book
Author : Stefan Ferdinand Müller
Publisher : BoD – Books on Demand
Release : 2016-04-08
ISBN : 3739248947
Language : En, Es, Fr & De

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Book Description :

This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others, the stability of the ferroelectric switching effect could be demonstrated in a temperature range of almost 400 K. Moreover, nanosecond switching speed and endurance in the range of 1 million to 10 billion cycles could be proven. Retention and imprint characteristics have furthermore been analyzed and are shown to be stable for 1000 hours bake time at 125 oC. Derived from the ferroelectric effect in HfO2, a 28 nm FeFET memory cell is introduced as the central application of this thesis. Based on numerical simulations, the memory concept is explained and possible routes towards an optimized FeFET cell are discussed. Subsequently, the results from electrical characterization of FeFET multi-structures are presented and discussed. By using Si:HfO2 it was possible to realize the world's first 28 nm FeFET devices possessing i.a. 10k cycling endurance and an extrapolated 10 year data retention at room temperature. The next step towards a FeFET memory is represented by connecting several memory cells into matrix-type configurations. A cell concept study illustrates the different ways in which FeFET cells can be combined together to give high density memory arrays. For the proposed architectures, operational schemes are theoretically discussed and analyzed by both electrical characterization of FeFET multi-structures and numerical simulations. The thesis concludes with the electrical characterization of small FeFET memory arrays. First results show that a separation between memory states can be achieved by applying poling and incremental step pulse programming (ISPP) sequences. These results represent an important cornerstone for future studies on Si:HfO2 and its related applications.

Gate Stack Engineering for Emerging Polarization based Non volatile Memories

Gate Stack Engineering for Emerging Polarization based Non volatile Memories Book
Author : Milan Pesic
Publisher : BoD – Books on Demand
Release : 2017-07-14
ISBN : 3744867889
Language : En, Es, Fr & De

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Book Description :

The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.

Ferroic Materials for Smart Systems

Ferroic Materials for Smart Systems Book
Author : Jiyan Dai
Publisher : John Wiley & Sons
Release : 2020-02-25
ISBN : 3527344764
Language : En, Es, Fr & De

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Book Description :

Presents state-of-the-art knowledge?from basic insights to applications?on ferroic materials-based devices This book covers the fundamental physics, fabrication methods, and applications of ferroic materials and covers bulk, thin films, and nanomaterials. It provides a thorough overview of smart materials and systems involving the interplays among the mechanical strain, electrical polarization, magnetization, as well as heat and light. Materials presented include ferroelectric, multiferroic, piezoelectric, electrostrictive, magnetostrictive, and shape memory materials as well as their composites. The book also introduces various sensor and transducer applications, such as ultrasonic transducers, surface acoustic wave devices, microwave devices, magneto-electric devices, infrared detectors and memories. Ferroic Materials for Smart Systems: Fabrication, Devices and Applications introduces advanced measurement and testing techniques in ferroelectrics, including FeRAM and ferroelectric tunnelling based resistive switching. It also looks at ferroelectricity in emerging materials, such as 2D materials and high-k gate dielectric material HfO2. Engineering considerations for device design and fabrication are examined, as well as applications for magnetostrictive devices. Multiferroics of materials possessing both ferromagnetic and ferroelectric orders is covered, along with ferroelastic materials represented by shape memory alloy and magnetic shape memory alloys. -Brings together physics, fabrication, and applications of ferroic materials in a coherent manner -Discusses recent advances in ferroic materials technology and applications -Covers dielectric, ferroelectric, pyroelectric and piezoelectric materials -Introduces electrostrictive materials and magnetostrictive materials -Examines shape memory alloys and magneto-shape-memory alloys -Introduces devices based on the integration of ferroelectric and ferromagnetic materials such as multiferroic memory device and ME coupling device for sensor applications Ferroic Materials for Smart Systems: Fabrication, Devices and Applications will appeal to a wide variety of researchers and developers in physics, materials science and engineering.

Inorganic Nanomaterials for Supercapacitor Design

Inorganic Nanomaterials for Supercapacitor Design Book
Author : Dr. Inamuddin,Rajender Boddula,Mohd Imran Ahamed,Abdullah Mohamed Asiri
Publisher : CRC Press
Release : 2019-12-20
ISBN : 100075121X
Language : En, Es, Fr & De

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Book Description :

Among electrode materials, inorganic materials have received vast consideration owing to their redox chemistry, chemical stability, high electrochemical performance, and high-power applications. These exceptional properties enable inorganic-based materials to find application in high-performance energy conversion and storage. The current advances in nanotechnology have uncovered novel inorganic materials by various strategies and their different morphological features may serve as a rule for future supercapacitor electrode design for efficient supercapacitor performance. Inorganic Nanomaterials for Supercapacitor Design depicts the latest advances in inorganic nanomaterials for supercapacitor energy storage devices. Key Features:  Provides an overview on the supercapacitor application of inorganic-based materials.  Describes the fundamental aspects, key factors, advantages, and challenges of inorganic supercapacitors.  Presents up-to-date coverage of the large, rapidly growing, and complex literature on inorganic supercapacitors.  Surveys current applications in supercapacitor energy storage.  Explores the new aspects of inorganic materials and next-generation supercapacitor systems.

Crystal Structure of Electroceramics

Crystal Structure of Electroceramics Book
Author : Stevin Snellius Pramana
Publisher : MDPI
Release : 2018-04-03
ISBN : 3038425931
Language : En, Es, Fr & De

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Book Description :

This book is a printed edition of the Special Issue "Crystal Structure of Electroceramics" that was published in Crystals

Chemical Solution Synthesis for Materials Design and Thin Film Device Applications

Chemical Solution Synthesis for Materials Design and Thin Film Device Applications Book
Author : Soumen Das,Sandip Dhara
Publisher : Elsevier
Release : 2021-01-09
ISBN : 012823170X
Language : En, Es, Fr & De

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Book Description :

Chemical Solution Synthesis for Materials Design and Thin Film Device Applications presents current research on wet chemical techniques for thin-film based devices. Sections cover the quality of thin films, types of common films used in devices, various thermodynamic properties, thin film patterning, device configuration and applications. As a whole, these topics create a roadmap for developing new materials and incorporating the results in device fabrication. This book is suitable for graduate, undergraduate, doctoral students, and researchers looking for quick guidance on material synthesis and device fabrication through wet chemical routes. Provides the different wet chemical routes for materials synthesis, along with the most relevant thin film structured materials for device applications Discusses patterning and solution processing of inorganic thin films, along with solvent-based processing techniques Includes an overview of key processes and methods in thin film synthesis, processing and device fabrication, such as nucleation, lithography and solution processing

Atomic Layer Deposition for Semiconductors

Atomic Layer Deposition for Semiconductors Book
Author : Cheol Seong Hwang
Publisher : Springer Science & Business Media
Release : 2013-10-18
ISBN : 146148054X
Language : En, Es, Fr & De

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Book Description :

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.