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Characterization Of Semiconductor Heterostructures And Nanostructures

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Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures Book
Author : Giovanni Agostini,Carlo Lamberti
Publisher : Elsevier
Release : 2011-08-11
ISBN : 9780080558158
Language : En, Es, Fr & De

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Book Description :

In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures Book
Author : Giovanni Agostini,Carlo Lamberti
Publisher : Newnes
Release : 2013-04-11
ISBN : 044459549X
Language : En, Es, Fr & De

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Book Description :

Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures

Semiconductor Nanostructures for Optoelectronic Devices

Semiconductor Nanostructures for Optoelectronic Devices Book
Author : Gyu-Chul Yi
Publisher : Springer Science & Business Media
Release : 2012-01-13
ISBN : 3642224806
Language : En, Es, Fr & De

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Book Description :

This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

Basic Semiconductor Physics

Basic Semiconductor Physics Book
Author : Chihiro Hamaguchi
Publisher : Springer Science & Business Media
Release : 2001
ISBN : 9783540416395
Language : En, Es, Fr & De

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Book Description :

A detailed description of the basic physics of semiconductors, with the potential to become as successful as the book by Yu and Cardona in this field. The text covers a wide range of important semiconductor phenomena, from the simple to the advanced.

Microscopy of Semiconducting Materials 2007

Microscopy of Semiconducting Materials 2007 Book
Author : A.G. Cullis,P.A. Midgley
Publisher : Springer Science & Business Media
Release : 2008-12-02
ISBN : 9781402086151
Language : En, Es, Fr & De

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Book Description :

This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.

Dilute Nitride Semiconductors

Dilute Nitride Semiconductors Book
Author : Mohamed Henini
Publisher : Elsevier
Release : 2004-12-15
ISBN : 9780080455990
Language : En, Es, Fr & De

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Book Description :

This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

Quantum Dot Heterostructures

Quantum Dot Heterostructures Book
Author : Dieter Bimberg,Marius Grundmann,Nikolai N. Ledentsov
Publisher : John Wiley & Sons
Release : 1999-03-17
ISBN : 9780471973881
Language : En, Es, Fr & De

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Book Description :

Quantum Dot Heterostructures Dieter Bimberg, Marius Grundmann and Nikolai N. Ledentsov Institute of Solid State Physics, Technische Universitï¿1⁄2t Berlin, Germany Quantum dots are nanometer-size semiconductor structures, and represent one of the most rapidly developing areas of current semiconductor research as increases in the speed and decreases in the size of semiconductor devices become more important. They present the utmost challenge to semiconductor technology, making possible fascinating novel devices. This important new reference book focuses on the key phenomena and principles. Chapter 1 provides a brief account of the history of quantum dots, whilst the second chapter surveys the various fabrication techniques used in the past two decades, and introduces the concept of self-organized growth. This topic is expanded in the following chapter, which presents a broad review of self-organization phenomena at surfaces of crystals. Experimental results on growth of quantum dot structures in many different systems and on their structural characterization are presented in Chapter 4. Basic properties of the dots relate to their geometric structure and chemical composition. Numerical modeling of the electronic and optical properties of real dots is presented in Chapter 5, together with general theoretical considerations on carrier capture, relaxation, recombination and properties of quantum dot lasers. Chapters 6 and 7 summarize experimental results on electronic, optical and electrical properties. The book concludes by disoussing highly topical results on quantum-dot-based photonic devices - mainly quantum dot lasers. Quantum Dot Heterostructures is written by some of the key researchers who have contributed significantly to the development of the field, and have pioneered both the theoretical understanding of quantum dot related phenomena and quantum dot lasers. It is of great interest to graduate and postgraduate students, and to researchers in semiconductor physics and technology and optoelectronics.

High Resolution X Ray Scattering

High Resolution X Ray Scattering Book
Author : Ullrich Pietsch,Vaclav Holy,Tilo Baumbach
Publisher : Springer Science & Business Media
Release : 2004-08-27
ISBN : 9780387400921
Language : En, Es, Fr & De

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Book Description :

During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.

Advances in Semiconductor Nanostructures

Advances in Semiconductor Nanostructures Book
Author : Alexander V. Latyshev,Anatoliy V. Dvurechenskii,Alexander L. Aseev
Publisher : Elsevier
Release : 2016-11-10
ISBN : 0128105135
Language : En, Es, Fr & De

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Book Description :

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries

Properties of III V Quantum Wells and Superlattices

Properties of III V Quantum Wells and Superlattices Book
Author : P. K. Bhattacharya,Pallab Bhattacharya
Publisher : IET
Release : 1996
ISBN : 9780852968819
Language : En, Es, Fr & De

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Book Description :

The characterization and precisely controlled building of atomic-scale mutilayers have been the subject of intensive R&D worldwide. Nanometric structures based on III-V semiconductors have attracted particular attention. Since 1970, around 15,000 papers have been published in all, of which 10,000 have appeared in the last 6 years. The resulting improved materials control is enabling engineers to achieve major improvements in the performance of microelectronic and optoelectronic devices such as QW lasers, tunnelling devices, modulators, switches and photodetectors. In this book, the large volume of research results which have accumulated is evaluated and distilled down to a useful, manageable concentration of up-to-date knowledge for electronic engineers and solid-state physicists. This has been carried out by an invited international team of over 50 specialists under the editorship of Professor Bhattacharya with support from INSPEC, who also compiled the subject index. There are 40 individually-written, self-contained modules ("Datareviews"), each specially commissioned to fit into a pre-determined structure. Subjects reviewed in depth include historical perspective, theory, epitaxial growth and doping, structure (e.g. X-ray diffraction), electronic properties, optical properties, modulation doping and devices. Each Datareview comprises tables, text, figures and expert guidance to the literature, as appropriate. Properties of III-V quantum wells and superlattices is intended both as a look-up source of evaluated data and as a finely-structured state-of-the-art review for academic and industrial R&D workers.

The Physics of Semiconductors

The Physics of Semiconductors Book
Author : Marius Grundmann
Publisher : Springer Science & Business Media
Release : 2010-11-11
ISBN : 9783642138843
Language : En, Es, Fr & De

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Book Description :

Semiconductorelectronicsiscommonplaceineveryhousehold.Semiconductor deviceshavealsoenabledeconomicallyreasonable?ber-basedopticalcom- nication, optical storage and high-frequency ampli?cation and have recently revolutionizedphotography,displaytechnologyandlighting.Alongwiththese tremendous technological developments, semiconductors have changed the way we work, communicate, entertain and think. The technological progress of semiconductor materials and devices is evolving continuously with a large worldwide e?ort in human and monetary capital. For students, semicond- tors o?er a rich, diverse and exciting ?eld with a great tradition and a bright future. This book introduces students to semiconductor physics and semicond- tor devices. It brings them to the point where they can specialize and enter supervisedlaboratoryresearch.Itisbasedonthetwosemestersemiconductor physics course taught at Universit ̈ at Leipzig in its Master of Science physics curriculum. Since the book can be followed with little or no pre-existing knowledge in solid-state physics and quantum mechanics, it is also suitable for undergraduate students. For the interested reader some additional topics are included in the book that can be covered in subsequent, more speci- ized courses. The material is selected to provide a balance between aspects of solid-state and semiconductor physics, the concepts of various semiconductor devices and modern applications in electronics and photonics.

Foundations of Modern EPR

Foundations of Modern EPR Book
Author : Gareth R. Eaton,Sandra S. Eaton
Publisher : World Scientific
Release : 1998
ISBN : 9789810232955
Language : En, Es, Fr & De

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Book Description :

Since its inception 50 years ago, electron paramagnetic resonance (EPR, also called ESR or EMR) has become a major tool in diverse fields ranging from biology and chemistry to solid state physics and materials science. This important book includes personal descriptions of early experiments by pioneers who laid the foundations for the field, perspectives on the state of the art, and glimpses of future opportunities. It presents a broad view of the foundations of EPR and its applications, and will therefore appeal to scientists in many fields. Even the expert will find here history not previously recorded and provocative views of future directions.

Solid State Photoemission and Related Methods

Solid State Photoemission and Related Methods Book
Author : Wolfgang Schattke,Michel A. Van Hove
Publisher : John Wiley & Sons
Release : 2003-11-21
ISBN : 9783527403349
Language : En, Es, Fr & De

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Book Description :

Photoemission is one of the principal techniques for the characterization and investigation of condensed matter systems. The field has experienced many developments in recent years, which may also be put down to important achievements in closely related areas. This timely and up-to-date handbook is written by experts in the field who provide the background needed by both experimentalists and theorists. It represents an interesting framework for showing the connection between theory and experiment by bringing together different concepts in the investigation of the properties of materials. The work addresses the geometric and electronic structure of solid surfaces and interfaces, theoretical methods for direct computation of spectra, experimental techniques for data acquisition, and physical models for direct data interpretation. It also includes such recent developments as full hemisphere acceptance in photoemission, two-electron photoemission, (e, 2e) electron diffraction, and photoelectron-electron/hole interaction.